Thickness-dependent Raman active modes of SnS thin films
Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic prop...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0062857 |