| Summary: | Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-power devices. For industrial applications of 2D ATS-FET, it is important to secure the threshold voltage (Vth) modulation technique. Here, Vth engineering is performed by altering the counter electrode (CE) of a TS device, and the electrical performance of the ATS-FET is systematically investigated. The work function difference between the active electrode and CE alters the internal electric field (E-field) formed between these two electrodes. This severely affects the metal ion migration of the active electrode and induces the Vth shift of the ATS-FET. Because the proposed Vth adjusting technique does not affect the channel material, the MoS2 ATS-FET with the proposed technique can shift Vth while maintaining a high on–off ratio of >105 A on average and achieves an ultra-low average SS of ∼10.929 mV/dec. Moreover, the SS variation due to the random interface traps between the channel and gate dielectric is sufficiently suppressed. This study is expected to be a cornerstone for ATS-FET research by offering a compact platform to adjust Vth without deteriorating steep-slope characteristics.
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