Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor

Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor

Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-power devices. For industrial applications of 2D ATS-F...

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Bibliographic Details
Main Authors: Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin, Hyun-Yong Yu
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Materials Today Advances
Subjects:
Atomic threshold switching field-effect transistors
2D channel
Threshold voltage modulation
Low subthreshold swing
High on–off current ratio
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049823000279

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http://www.sciencedirect.com/science/article/pii/S2590049823000279

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