Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor
Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-power devices. For industrial applications of 2D ATS-F...
Main Authors: | Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin, Hyun-Yong Yu |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-06-01
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Series: | Materials Today Advances |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049823000279 |
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