Universal and Convenient Optimization Strategies for Three-Terminal Memristors

Neuromorphic computing, i.e., brainlike computing, has attracted a great deal of attention because of its exceptional performance. For the hardware implementation of neuromorphic systems, the desired key building blocks, artificial synapses, have been intensively investigated recently. However, many...

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Main Authors: Kunlong Yang, Yuxiang Huan, Jiawei Xu, Zhuo Zou, Yiqiang Zhan, Lirong Zheng, Fernando Seoane
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8454450/
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author Kunlong Yang
Yuxiang Huan
Jiawei Xu
Zhuo Zou
Yiqiang Zhan
Lirong Zheng
Fernando Seoane
author_facet Kunlong Yang
Yuxiang Huan
Jiawei Xu
Zhuo Zou
Yiqiang Zhan
Lirong Zheng
Fernando Seoane
author_sort Kunlong Yang
collection DOAJ
description Neuromorphic computing, i.e., brainlike computing, has attracted a great deal of attention because of its exceptional performance. For the hardware implementation of neuromorphic systems, the desired key building blocks, artificial synapses, have been intensively investigated recently. However, many issues, such as the small state number, low reliability, and high energy consumption, have complicated the path to real applications. Therefore, methods that can improve the performance of the artificial synapses are highly desired. Although different artificial synapses have diverse working mechanisms, universal optimization strategies that can be applied to most three-terminal field-effect-transistor-type artificial synapses are proposed in this paper. Instead of wasting the third terminal in the device structure, the working condition can be effectively tuned by this third terminal. The key parameters, such as the gate electric field intensity and distribution, can be adjusted, and the performance is thereby tuned. In this manner, multiple performance metrics are optimized, such as the current change per pulse (ΔI), the linearity, the uniformity, and the power consumption. The mechanisms behind these strategies are also investigated to strengthen the effectiveness. This paper will push the performance of the current artificial synapses to a new level.
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spelling doaj.art-fbfb51a2848b45369ebb832c5b5d6e682022-12-21T23:44:21ZengIEEEIEEE Access2169-35362018-01-016488154882610.1109/ACCESS.2018.28669308454450Universal and Convenient Optimization Strategies for Three-Terminal MemristorsKunlong Yang0https://orcid.org/0000-0002-1768-1071Yuxiang Huan1Jiawei Xu2https://orcid.org/0000-0002-6192-558XZhuo Zou3Yiqiang Zhan4Lirong Zheng5Fernando Seoane6School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, Stockholm, SwedenState Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, SIST, Fudan University, Shanghai, ChinaDepartment for Clinical Science, Intervention and Technology, Karolinska Institutet, Stockholm, SwedenNeuromorphic computing, i.e., brainlike computing, has attracted a great deal of attention because of its exceptional performance. For the hardware implementation of neuromorphic systems, the desired key building blocks, artificial synapses, have been intensively investigated recently. However, many issues, such as the small state number, low reliability, and high energy consumption, have complicated the path to real applications. Therefore, methods that can improve the performance of the artificial synapses are highly desired. Although different artificial synapses have diverse working mechanisms, universal optimization strategies that can be applied to most three-terminal field-effect-transistor-type artificial synapses are proposed in this paper. Instead of wasting the third terminal in the device structure, the working condition can be effectively tuned by this third terminal. The key parameters, such as the gate electric field intensity and distribution, can be adjusted, and the performance is thereby tuned. In this manner, multiple performance metrics are optimized, such as the current change per pulse (ΔI), the linearity, the uniformity, and the power consumption. The mechanisms behind these strategies are also investigated to strengthen the effectiveness. This paper will push the performance of the current artificial synapses to a new level.https://ieeexplore.ieee.org/document/8454450/Memristorsoptimization methodsneuromorphics
spellingShingle Kunlong Yang
Yuxiang Huan
Jiawei Xu
Zhuo Zou
Yiqiang Zhan
Lirong Zheng
Fernando Seoane
Universal and Convenient Optimization Strategies for Three-Terminal Memristors
IEEE Access
Memristors
optimization methods
neuromorphics
title Universal and Convenient Optimization Strategies for Three-Terminal Memristors
title_full Universal and Convenient Optimization Strategies for Three-Terminal Memristors
title_fullStr Universal and Convenient Optimization Strategies for Three-Terminal Memristors
title_full_unstemmed Universal and Convenient Optimization Strategies for Three-Terminal Memristors
title_short Universal and Convenient Optimization Strategies for Three-Terminal Memristors
title_sort universal and convenient optimization strategies for three terminal memristors
topic Memristors
optimization methods
neuromorphics
url https://ieeexplore.ieee.org/document/8454450/
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