Efficiency Assessment of Traditional GaAs and Low-Power InGaAs Schottky Diodes in Full-Band Mixers at 0.3 THz
In this paper, we present and compare two different full-band WR3.4 Sub-Harmonic Mixers (SHMs), featuring traditional GaAs and the novel low-barrier InGaAs discrete diodes. In this study, an Active Multiplier Chain (AMC) is used as a Local Oscillator source, which provides peak powers beyond 20 mW....
Main Authors: | Javier Martinez Gil, Diego Moro-Melgar, Artur Negrus, Ion Oprea, Oleg Cojocari |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-11-01
|
Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/12/21/4518 |
Similar Items
-
Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
by: Wang Zhiming, et al.
Published: (2010-01-01) -
Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
by: M. Souaf, et al.
Published: (2015-09-01) -
Estudio de capas de desacoplo de InGaAs/GaAs(001) por crecimiento combinado de MBE-ALMBE en forma dinámica y escalonada
by: Herrera, M., et al.
Published: (2004-04-01) -
Inhibición de la relajación plástica en heteroestructuras InGaAs/GaAs(001) crecidas a baja temperatura
by: Herrera, M., et al.
Published: (2004-04-01) -
Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
by: Sanghyeon Kim, et al.
Published: (2019-01-01)