Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3
Abstract The layered semiconductor In2Se3 has a low temperature crystalline–crystalline (α → β) phase transformation with distinct electrical properties that make it a promising candidate for phase change memory. Here, using scanning tunneling microscopy, correlative in situ micro‐Raman, and electri...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300457 |
| _version_ | 1797359872485883904 |
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| author | Nicholas D Ignacio Jameela Fatheema Yu‐Rim Jeon Deji Akinwande |
| author_facet | Nicholas D Ignacio Jameela Fatheema Yu‐Rim Jeon Deji Akinwande |
| author_sort | Nicholas D Ignacio |
| collection | DOAJ |
| description | Abstract The layered semiconductor In2Se3 has a low temperature crystalline–crystalline (α → β) phase transformation with distinct electrical properties that make it a promising candidate for phase change memory. Here, using scanning tunneling microscopy, correlative in situ micro‐Raman, and electrical measurements, it is shown that the β phase can persist in bulk crystals at room temperature in non‐oxidative environments. Of particular note, the stability of β phase crystals in ambient conditions under encapsulation of graphene and similar passivation layers, is reported for the first time. The strategy of encapsulation to ensure the persistence of β phase overlaps with efforts to passivate switching materials. It is further demonstrated that degradation from the elevated temperatures required for the phase change is slowed through examination of Raman signatures. These results demonstrate an alternative method of phase manipulation with a new stabilization of β‐In2Se3 in ambient conditions potentially extendable to other polymorphic materials, and the importance of passivation in In2Se3 memory devices. |
| first_indexed | 2024-03-08T15:30:04Z |
| format | Article |
| id | doaj.art-fc3ab59f46a743e4bf1fba6abeb34ac1 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-08T15:30:04Z |
| publishDate | 2024-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-fc3ab59f46a743e4bf1fba6abeb34ac12024-01-10T06:50:59ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-01-01101n/an/a10.1002/aelm.202300457Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3Nicholas D Ignacio0Jameela Fatheema1Yu‐Rim Jeon2Deji Akinwande3Microelectronics Research Center The University of Texas at Austin Austin TX 78758 USAMicroelectronics Research Center The University of Texas at Austin Austin TX 78758 USAMicroelectronics Research Center The University of Texas at Austin Austin TX 78758 USAMicroelectronics Research Center The University of Texas at Austin Austin TX 78758 USAAbstract The layered semiconductor In2Se3 has a low temperature crystalline–crystalline (α → β) phase transformation with distinct electrical properties that make it a promising candidate for phase change memory. Here, using scanning tunneling microscopy, correlative in situ micro‐Raman, and electrical measurements, it is shown that the β phase can persist in bulk crystals at room temperature in non‐oxidative environments. Of particular note, the stability of β phase crystals in ambient conditions under encapsulation of graphene and similar passivation layers, is reported for the first time. The strategy of encapsulation to ensure the persistence of β phase overlaps with efforts to passivate switching materials. It is further demonstrated that degradation from the elevated temperatures required for the phase change is slowed through examination of Raman signatures. These results demonstrate an alternative method of phase manipulation with a new stabilization of β‐In2Se3 in ambient conditions potentially extendable to other polymorphic materials, and the importance of passivation in In2Se3 memory devices.https://doi.org/10.1002/aelm.202300457encapsulationIn2Se3phase transformationraman spectroscopyscanning tunnelling microscopy |
| spellingShingle | Nicholas D Ignacio Jameela Fatheema Yu‐Rim Jeon Deji Akinwande Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 Advanced Electronic Materials encapsulation In2Se3 phase transformation raman spectroscopy scanning tunnelling microscopy |
| title | Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 |
| title_full | Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 |
| title_fullStr | Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 |
| title_full_unstemmed | Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 |
| title_short | Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 |
| title_sort | air stable atomically encapsulated crystalline crystalline phase transitions in in2se3 |
| topic | encapsulation In2Se3 phase transformation raman spectroscopy scanning tunnelling microscopy |
| url | https://doi.org/10.1002/aelm.202300457 |
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