POSSIBILITY RESEARCH FOR SILICON CARBIDE BULK CRYSTALS GROWTH OF 3C POLYTYPE FOR POWER DEVICES

POSSIBILITY RESEARCH FOR SILICON CARBIDE BULK CRYSTALS GROWTH OF 3C POLYTYPE FOR POWER DEVICES

The paper deals with creation of heteropolytypes instrument structures on silicon carbide for power devices not subjected to degradation of electrical properties. The phenomenon of polytypism is considered. Characteristics of different SiC polytypes are given. Information is cited about the causes a...

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Bibliographic Details
Main Authors:	P. V. Bulat, A. A. Lebedev, Y. N. Makarov
Format:	Article
Language:	English
Published:	Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2014-05-01
Series:	Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:	silicon carbide polytype polytypeness sublimation epitaxy heteropolytype structures 3C-SiC
Online Access:	http://ntv.ifmo.ru/file/article/9646.pdf

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