A Performance Optimized CSTBT with Low Switching Loss
A novel Performance Optimized Carrier Stored Trench Gate Bipolar Transistor (CSTBT) with Low Switching Loss has been proposed. By applying a positive DC voltage to the shield gate, the carrier storage effect is enhanced, the hole blocking capability is improved and the conduction loss is reduced. Th...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-05-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/14/5/1039 |