Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength
Abstract Ferroelectric (FE) capacitors exhibiting ultrahigh power densities are widely utilized as electrostatic energy storage devices in pulsed electronic devices. One approach to maximize the discharge energy density (Ud) of capacitors is to increase the breakdown strength (Eb) accompanied with h...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-04-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202201141 |
| _version_ | 1827893423235923968 |
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| author | Je Oh Choi Tae Yeon Kim Seong Min Park WooJun Seol Hyunjin Joh Gopinathan Anoop Ji Young Jo |
| author_facet | Je Oh Choi Tae Yeon Kim Seong Min Park WooJun Seol Hyunjin Joh Gopinathan Anoop Ji Young Jo |
| author_sort | Je Oh Choi |
| collection | DOAJ |
| description | Abstract Ferroelectric (FE) capacitors exhibiting ultrahigh power densities are widely utilized as electrostatic energy storage devices in pulsed electronic devices. One approach to maximize the discharge energy density (Ud) of capacitors is to increase the breakdown strength (Eb) accompanied with high maximum polarization (Pm) while suppressing the energy loss. However, the inverse relationship between Eb and Pm challenges the simultaneous enhancement of Eb and Ud. To overcome this limitation, FE/relaxor FE (RFE) heterostructure capacitors composed of Co‐doped BaTiO3 (BTCO) and Sn‐doped BaTiO3 (BTS) epitaxial thin film layers to decouple the Eb and Pm values are fabricated and the simultaneous enhancement of the Eb and Ud up to 7.9 MV cm−1 and 117 J cm−3, respectively is achieved. The high Eb and Ud values can be attributed to the suppression of the leakage current at the BTCO/BTS interface, a narrower hysteresis loop contributed by the BTS, and high Pm and Eb from the BTCO layer. Additionally, the BTCO/BTS heterostructure capacitors exhibit excellent fatigue endurance of up to 108 cycles and are thermal stable even at 160 °C. Through properly designing the FE and RFE layers, thermally stable and reliable FE/RFE heterostructure capacitors exhibiting high Ud and Eb can be realized. |
| first_indexed | 2024-03-12T21:53:44Z |
| format | Article |
| id | doaj.art-fc8054392e0149c2b4101258a87645b8 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:53:44Z |
| publishDate | 2023-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-fc8054392e0149c2b4101258a87645b82023-07-26T01:35:24ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-04-0194n/an/a10.1002/aelm.202201141Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown StrengthJe Oh Choi0Tae Yeon Kim1Seong Min Park2WooJun Seol3Hyunjin Joh4Gopinathan Anoop5Ji Young Jo6School of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaSchool of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 61005 Republic of KoreaAbstract Ferroelectric (FE) capacitors exhibiting ultrahigh power densities are widely utilized as electrostatic energy storage devices in pulsed electronic devices. One approach to maximize the discharge energy density (Ud) of capacitors is to increase the breakdown strength (Eb) accompanied with high maximum polarization (Pm) while suppressing the energy loss. However, the inverse relationship between Eb and Pm challenges the simultaneous enhancement of Eb and Ud. To overcome this limitation, FE/relaxor FE (RFE) heterostructure capacitors composed of Co‐doped BaTiO3 (BTCO) and Sn‐doped BaTiO3 (BTS) epitaxial thin film layers to decouple the Eb and Pm values are fabricated and the simultaneous enhancement of the Eb and Ud up to 7.9 MV cm−1 and 117 J cm−3, respectively is achieved. The high Eb and Ud values can be attributed to the suppression of the leakage current at the BTCO/BTS interface, a narrower hysteresis loop contributed by the BTS, and high Pm and Eb from the BTCO layer. Additionally, the BTCO/BTS heterostructure capacitors exhibit excellent fatigue endurance of up to 108 cycles and are thermal stable even at 160 °C. Through properly designing the FE and RFE layers, thermally stable and reliable FE/RFE heterostructure capacitors exhibiting high Ud and Eb can be realized.https://doi.org/10.1002/aelm.202201141BaTiO 3breakdown strengthdielectric capacitorsFE/RFE heterostructureultrahigh energy density |
| spellingShingle | Je Oh Choi Tae Yeon Kim Seong Min Park WooJun Seol Hyunjin Joh Gopinathan Anoop Ji Young Jo Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength Advanced Electronic Materials BaTiO 3 breakdown strength dielectric capacitors FE/RFE heterostructure ultrahigh energy density |
| title | Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength |
| title_full | Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength |
| title_fullStr | Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength |
| title_full_unstemmed | Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength |
| title_short | Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength |
| title_sort | co batio3 sn batio3 heterostructure thin film capacitors with ultrahigh energy density and breakdown strength |
| topic | BaTiO 3 breakdown strength dielectric capacitors FE/RFE heterostructure ultrahigh energy density |
| url | https://doi.org/10.1002/aelm.202201141 |
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