| Summary: | In this paper, a field effect transistor (FET)-type sensor with Pt-decorated In<sub>2</sub>O<sub>3</sub> (Pt-In<sub>2</sub>O<sub>3</sub>) nanoparticles is fabricated for detecting H<sub>2</sub> gas at room temperature. A pulsed measurement method is adopted to continuously alternate between pre-biasing the gate and reading the drain current of the FET-type sensor. This method effectively reduces the drift in the sensing signal. It is also found that negative pre-bias voltages can dramatically shorten the recovery time of the sensor after sensing H<sub>2</sub>, while positive pre-bias voltages have the opposite effect. The H<sub>2</sub> sensing performance of the sensor is characterized under the enhancement of a pulsed negative pre-bias. By calculating and comparing the root mean square, signal-to-noise ratio, and detection limit of the sensor under different operating regions, it is found that the sensor has the best sensing performance in the subthreshold region, which is suggested to be the optimum operating region for FET-type sensors. In addition, the presence of oxygen significantly consumes the hydrogen molecules and reduces the room-temperature H<sub>2</sub> sensitivity of the sensor. The proposed sensor presents promising H<sub>2</sub> sensing properties, and this research could be a guide for the use of FET-type sensors in more gas detection applications.
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