Hydrogen Sensing Properties of FET-Type Sensors with Pt-In<sub>2</sub>O<sub>3</sub> at Room Temperature

Hydrogen Sensing Properties of FET-Type Sensors with Pt-In<sub>2</sub>O<sub>3</sub> at Room Temperature

In this paper, a field effect transistor (FET)-type sensor with Pt-decorated In<sub>2</sub>O<sub>3</sub> (Pt-In<sub>2</sub>O<sub>3</sub>) nanoparticles is fabricated for detecting H<sub>2</sub> gas at room temperature. A pulsed measurement...

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Bibliographic Details
Main Authors:	Meile Wu, Shixin Hu, Zhanyu Wu, Zebin Wang, Meng Li, Xi Liu, Xiaoshi Jin, Jong-Ho Lee
Format:	Article
Language:	English
Published:	MDPI AG 2024-02-01
Series:	Chemosensors
Subjects:	room-temperature hydrogen sensing FET sensors Pt-decorated In<sub>2</sub>O<sub>3</sub> pulse measurement
Online Access:	https://www.mdpi.com/2227-9040/12/3/32

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