Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications
Abstract Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb2Te alloys are now gaining increasing attention for on-chip photonic applications, due to their growth-driven crystallizat...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-08-01
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| Series: | npj Computational Materials |
| Online Access: | https://doi.org/10.1038/s41524-023-01098-1 |
| _version_ | 1797452143446196224 |
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| author | Xu-Dong Wang Wen Zhou Hangming Zhang Shehzad Ahmed Tiankuo Huang Riccardo Mazzarello En Ma Wei Zhang |
| author_facet | Xu-Dong Wang Wen Zhou Hangming Zhang Shehzad Ahmed Tiankuo Huang Riccardo Mazzarello En Ma Wei Zhang |
| author_sort | Xu-Dong Wang |
| collection | DOAJ |
| description | Abstract Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb2Te alloys are now gaining increasing attention for on-chip photonic applications, due to their growth-driven crystallization features. However, it remains unknown whether Sb2Te also forms a metastable crystalline phase upon nanoseconds crystallization in devices, similar to the case of nucleation-driven Ge-Sb-Te alloys. Here, we carry out ab initio simulations to understand the changes in optical properties of amorphous Sb2Te upon crystallization and post annealing. During the continuous transformation process, changes in the dielectric function are highly wavelength-dependent from the visible-light range towards the telecommunication band. Our finite-difference time-domain simulations based on the ab initio input reveal key differences in device output for color display and photonic memory applications upon tellurium ordering. Our work serves as an example of how multiscale simulations of materials can guide practical photonic phase-change applications. |
| first_indexed | 2024-03-09T15:03:33Z |
| format | Article |
| id | doaj.art-fcbadac42f5241e0aa6e13d10829c54a |
| institution | Directory Open Access Journal |
| issn | 2057-3960 |
| language | English |
| last_indexed | 2024-03-09T15:03:33Z |
| publishDate | 2023-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Computational Materials |
| spelling | doaj.art-fcbadac42f5241e0aa6e13d10829c54a2023-11-26T13:47:21ZengNature Portfolionpj Computational Materials2057-39602023-08-01911910.1038/s41524-023-01098-1Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applicationsXu-Dong Wang0Wen Zhou1Hangming Zhang2Shehzad Ahmed3Tiankuo Huang4Riccardo Mazzarello5En Ma6Wei Zhang7Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityCenter for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityCenter for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityCenter for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityCenter for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityDepartment of Physics, Sapienza University of RomeCenter for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityCenter for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong UniversityAbstract Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb2Te alloys are now gaining increasing attention for on-chip photonic applications, due to their growth-driven crystallization features. However, it remains unknown whether Sb2Te also forms a metastable crystalline phase upon nanoseconds crystallization in devices, similar to the case of nucleation-driven Ge-Sb-Te alloys. Here, we carry out ab initio simulations to understand the changes in optical properties of amorphous Sb2Te upon crystallization and post annealing. During the continuous transformation process, changes in the dielectric function are highly wavelength-dependent from the visible-light range towards the telecommunication band. Our finite-difference time-domain simulations based on the ab initio input reveal key differences in device output for color display and photonic memory applications upon tellurium ordering. Our work serves as an example of how multiscale simulations of materials can guide practical photonic phase-change applications.https://doi.org/10.1038/s41524-023-01098-1 |
| spellingShingle | Xu-Dong Wang Wen Zhou Hangming Zhang Shehzad Ahmed Tiankuo Huang Riccardo Mazzarello En Ma Wei Zhang Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications npj Computational Materials |
| title | Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications |
| title_full | Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications |
| title_fullStr | Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications |
| title_full_unstemmed | Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications |
| title_short | Multiscale simulations of growth-dominated Sb2Te phase-change material for non-volatile photonic applications |
| title_sort | multiscale simulations of growth dominated sb2te phase change material for non volatile photonic applications |
| url | https://doi.org/10.1038/s41524-023-01098-1 |
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