Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
Detection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compound...
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MDPI AG
2022-03-01
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author | Essam M. Dief Natasha Hoffmann Nadim Darwish |
author_facet | Essam M. Dief Natasha Hoffmann Nadim Darwish |
author_sort | Essam M. Dief |
collection | DOAJ |
description | Detection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compounds (NACs) have been an analytical target for explosives’ electrochemical sensors. Various electrode materials have been used to detect NACs in solution, including glassy carbon electrodes (GCE), platinum (Pt), and gold (Au) electrodes, by tracking the reversible oxidation/reduction properties of the NACs on these electrodes. Here, we show that the reduction of dinitrobenzene (DNB) on oxide-free silicon (Si–H) electrodes is irreversible with two reduction peaks that disappear within the successive voltammetric scanning. AFM imaging showed the formation of a polymeric film whose thickness scales up with the DNB concentration. This suggest that Si–H surfaces can serve as DNB sensors and possibly other explosive substances. Cyclic voltammetry (CV) measurements showed that the limit of detection (LoD) on Si–H is one order of magnitude lower than that obtained on GCE. In addition, EIS measurements showed that the LoD of DNB on Si–H is two orders of magnitude lower than the CV method. The fact that a Si–H surface can be used to track the presence of DNB makes it a suitable surface to be implemented as a sensing platform. To translate this concept into a sensor, however, it would require engineering and fabrication prospect to be compatible with the current semiconductor technologies. |
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issn | 2571-9637 |
language | English |
last_indexed | 2024-03-09T12:36:30Z |
publishDate | 2022-03-01 |
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spelling | doaj.art-fcd1770a79ce4627bad6ff7267c3ad6d2023-11-30T22:24:48ZengMDPI AGSurfaces2571-96372022-03-015121822710.3390/surfaces5010015Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives SensorsEssam M. Dief0Natasha Hoffmann1Nadim Darwish2School of Molecular and Life Sciences, Curtin Institute of Functional molecules and Interfaces, Curtin University, Bentley, WA 6102, AustraliaSchool of Molecular and Life Sciences, Curtin Institute of Functional molecules and Interfaces, Curtin University, Bentley, WA 6102, AustraliaSchool of Molecular and Life Sciences, Curtin Institute of Functional molecules and Interfaces, Curtin University, Bentley, WA 6102, AustraliaDetection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compounds (NACs) have been an analytical target for explosives’ electrochemical sensors. Various electrode materials have been used to detect NACs in solution, including glassy carbon electrodes (GCE), platinum (Pt), and gold (Au) electrodes, by tracking the reversible oxidation/reduction properties of the NACs on these electrodes. Here, we show that the reduction of dinitrobenzene (DNB) on oxide-free silicon (Si–H) electrodes is irreversible with two reduction peaks that disappear within the successive voltammetric scanning. AFM imaging showed the formation of a polymeric film whose thickness scales up with the DNB concentration. This suggest that Si–H surfaces can serve as DNB sensors and possibly other explosive substances. Cyclic voltammetry (CV) measurements showed that the limit of detection (LoD) on Si–H is one order of magnitude lower than that obtained on GCE. In addition, EIS measurements showed that the LoD of DNB on Si–H is two orders of magnitude lower than the CV method. The fact that a Si–H surface can be used to track the presence of DNB makes it a suitable surface to be implemented as a sensing platform. To translate this concept into a sensor, however, it would require engineering and fabrication prospect to be compatible with the current semiconductor technologies.https://www.mdpi.com/2571-9637/5/1/15explosive detectionnitroaromaticssiliconchemical sensors |
spellingShingle | Essam M. Dief Natasha Hoffmann Nadim Darwish Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors Surfaces explosive detection nitroaromatics silicon chemical sensors |
title | Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors |
title_full | Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors |
title_fullStr | Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors |
title_full_unstemmed | Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors |
title_short | Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors |
title_sort | electrochemical detection of dinitrobenzene on silicon electrodes toward explosives sensors |
topic | explosive detection nitroaromatics silicon chemical sensors |
url | https://www.mdpi.com/2571-9637/5/1/15 |
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