Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors

Detection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compound...

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Main Authors: Essam M. Dief, Natasha Hoffmann, Nadim Darwish
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Surfaces
Subjects:
Online Access:https://www.mdpi.com/2571-9637/5/1/15
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author Essam M. Dief
Natasha Hoffmann
Nadim Darwish
author_facet Essam M. Dief
Natasha Hoffmann
Nadim Darwish
author_sort Essam M. Dief
collection DOAJ
description Detection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compounds (NACs) have been an analytical target for explosives’ electrochemical sensors. Various electrode materials have been used to detect NACs in solution, including glassy carbon electrodes (GCE), platinum (Pt), and gold (Au) electrodes, by tracking the reversible oxidation/reduction properties of the NACs on these electrodes. Here, we show that the reduction of dinitrobenzene (DNB) on oxide-free silicon (Si–H) electrodes is irreversible with two reduction peaks that disappear within the successive voltammetric scanning. AFM imaging showed the formation of a polymeric film whose thickness scales up with the DNB concentration. This suggest that Si–H surfaces can serve as DNB sensors and possibly other explosive substances. Cyclic voltammetry (CV) measurements showed that the limit of detection (LoD) on Si–H is one order of magnitude lower than that obtained on GCE. In addition, EIS measurements showed that the LoD of DNB on Si–H is two orders of magnitude lower than the CV method. The fact that a Si–H surface can be used to track the presence of DNB makes it a suitable surface to be implemented as a sensing platform. To translate this concept into a sensor, however, it would require engineering and fabrication prospect to be compatible with the current semiconductor technologies.
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spelling doaj.art-fcd1770a79ce4627bad6ff7267c3ad6d2023-11-30T22:24:48ZengMDPI AGSurfaces2571-96372022-03-015121822710.3390/surfaces5010015Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives SensorsEssam M. Dief0Natasha Hoffmann1Nadim Darwish2School of Molecular and Life Sciences, Curtin Institute of Functional molecules and Interfaces, Curtin University, Bentley, WA 6102, AustraliaSchool of Molecular and Life Sciences, Curtin Institute of Functional molecules and Interfaces, Curtin University, Bentley, WA 6102, AustraliaSchool of Molecular and Life Sciences, Curtin Institute of Functional molecules and Interfaces, Curtin University, Bentley, WA 6102, AustraliaDetection of explosives is vital for protection and criminal investigations, and developing novel explosives’ sensors stands at the forefront of the analytical and forensic chemistry endeavors. Due to the presence of terminal nitro groups that can be electrochemically reduced, nitroaromatic compounds (NACs) have been an analytical target for explosives’ electrochemical sensors. Various electrode materials have been used to detect NACs in solution, including glassy carbon electrodes (GCE), platinum (Pt), and gold (Au) electrodes, by tracking the reversible oxidation/reduction properties of the NACs on these electrodes. Here, we show that the reduction of dinitrobenzene (DNB) on oxide-free silicon (Si–H) electrodes is irreversible with two reduction peaks that disappear within the successive voltammetric scanning. AFM imaging showed the formation of a polymeric film whose thickness scales up with the DNB concentration. This suggest that Si–H surfaces can serve as DNB sensors and possibly other explosive substances. Cyclic voltammetry (CV) measurements showed that the limit of detection (LoD) on Si–H is one order of magnitude lower than that obtained on GCE. In addition, EIS measurements showed that the LoD of DNB on Si–H is two orders of magnitude lower than the CV method. The fact that a Si–H surface can be used to track the presence of DNB makes it a suitable surface to be implemented as a sensing platform. To translate this concept into a sensor, however, it would require engineering and fabrication prospect to be compatible with the current semiconductor technologies.https://www.mdpi.com/2571-9637/5/1/15explosive detectionnitroaromaticssiliconchemical sensors
spellingShingle Essam M. Dief
Natasha Hoffmann
Nadim Darwish
Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
Surfaces
explosive detection
nitroaromatics
silicon
chemical sensors
title Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
title_full Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
title_fullStr Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
title_full_unstemmed Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
title_short Electrochemical Detection of Dinitrobenzene on Silicon Electrodes: Toward Explosives Sensors
title_sort electrochemical detection of dinitrobenzene on silicon electrodes toward explosives sensors
topic explosive detection
nitroaromatics
silicon
chemical sensors
url https://www.mdpi.com/2571-9637/5/1/15
work_keys_str_mv AT essammdief electrochemicaldetectionofdinitrobenzeneonsiliconelectrodestowardexplosivessensors
AT natashahoffmann electrochemicaldetectionofdinitrobenzeneonsiliconelectrodestowardexplosivessensors
AT nadimdarwish electrochemicaldetectionofdinitrobenzeneonsiliconelectrodestowardexplosivessensors