Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces
Abstract The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X‐ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-12-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202201997 |
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| author | Regina Galceran Frédéric Bonell Lorenzo Camosi Guillaume Sauthier Zewdu M. Gebeyehu Maria José Esplandiu Aloïs Arrighi Iván Fernández Aguirre Adriana I. Figueroa Juan F. Sierra Sergio O. Valenzuela |
| author_facet | Regina Galceran Frédéric Bonell Lorenzo Camosi Guillaume Sauthier Zewdu M. Gebeyehu Maria José Esplandiu Aloïs Arrighi Iván Fernández Aguirre Adriana I. Figueroa Juan F. Sierra Sergio O. Valenzuela |
| author_sort | Regina Galceran |
| collection | DOAJ |
| description | Abstract The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X‐ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing‐free interfaces in the topological insulator Bi2Te3 by means of dry‐transferred CVD graphene are reported. After air exposure, no traces of Bi2Te3 oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in Bi2Te3/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare Bi2Te3 under ambient conditions and the deep BiTe bonding disruption that occurs in Bi2Te3/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states. |
| first_indexed | 2024-03-12T11:51:09Z |
| format | Article |
| id | doaj.art-fce6140025c6411fadd11568d9df1aff |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:51:09Z |
| publishDate | 2022-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-fce6140025c6411fadd11568d9df1aff2023-08-31T08:56:16ZengWiley-VCHAdvanced Materials Interfaces2196-73502022-12-01936n/an/a10.1002/admi.202201997Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free InterfacesRegina Galceran0Frédéric Bonell1Lorenzo Camosi2Guillaume Sauthier3Zewdu M. Gebeyehu4Maria José Esplandiu5Aloïs Arrighi6Iván Fernández Aguirre7Adriana I. Figueroa8Juan F. Sierra9Sergio O. Valenzuela10Catalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainCatalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 SpainAbstract The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X‐ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing‐free interfaces in the topological insulator Bi2Te3 by means of dry‐transferred CVD graphene are reported. After air exposure, no traces of Bi2Te3 oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in Bi2Te3/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare Bi2Te3 under ambient conditions and the deep BiTe bonding disruption that occurs in Bi2Te3/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states.https://doi.org/10.1002/admi.202201997Bi 2Te 3graphene−topological insulator interfaceintermixingpassivationXPS |
| spellingShingle | Regina Galceran Frédéric Bonell Lorenzo Camosi Guillaume Sauthier Zewdu M. Gebeyehu Maria José Esplandiu Aloïs Arrighi Iván Fernández Aguirre Adriana I. Figueroa Juan F. Sierra Sergio O. Valenzuela Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces Advanced Materials Interfaces Bi 2Te 3 graphene−topological insulator interface intermixing passivation XPS |
| title | Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces |
| title_full | Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces |
| title_fullStr | Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces |
| title_full_unstemmed | Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces |
| title_short | Passivation of Bi2Te3 Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces |
| title_sort | passivation of bi2te3 topological insulator by transferred cvd graphene toward intermixing free interfaces |
| topic | Bi 2Te 3 graphene−topological insulator interface intermixing passivation XPS |
| url | https://doi.org/10.1002/admi.202201997 |
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