Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
<p>Abstract</p> <p>Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generate...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2009-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-009-9507-3 |
| _version_ | 1797705625067585536 |
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| author | Heyn Ch Stemmann A Köppen T Strelow Ch Kipp T Grave M Mendach S Hansen W |
| author_facet | Heyn Ch Stemmann A Köppen T Strelow Ch Kipp T Grave M Mendach S Hansen W |
| author_sort | Heyn Ch |
| collection | DOAJ |
| description | <p>Abstract</p> <p>Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.</p> |
| first_indexed | 2024-03-12T05:40:07Z |
| format | Article |
| id | doaj.art-fd346afab5444dd99d04f90a4c905608 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T05:40:07Z |
| publishDate | 2009-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-fd346afab5444dd99d04f90a4c9056082023-09-03T06:15:14ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2009-01-0153576580Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled NanoholesHeyn ChStemmann AKöppen TStrelow ChKipp TGrave MMendach SHansen W<p>Abstract</p> <p>Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.</p>http://dx.doi.org/10.1007/s11671-009-9507-3Quantum dotsMolecular beam epitaxyDroplet etchingPhotoluminescenceAtomic force microscopy |
| spellingShingle | Heyn Ch Stemmann A Köppen T Strelow Ch Kipp T Grave M Mendach S Hansen W Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes Nanoscale Research Letters Quantum dots Molecular beam epitaxy Droplet etching Photoluminescence Atomic force microscopy |
| title | Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes |
| title_full | Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes |
| title_fullStr | Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes |
| title_full_unstemmed | Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes |
| title_short | Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes |
| title_sort | optical properties of gaas quantum dots fabricated by filling of self assembled nanoholes |
| topic | Quantum dots Molecular beam epitaxy Droplet etching Photoluminescence Atomic force microscopy |
| url | http://dx.doi.org/10.1007/s11671-009-9507-3 |
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