Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor
Abstract The negative photoconductance (NPC) effect, defined as an increase in resistance upon exposure to illumination, holds great potential for application in photoelectric devices. A prepared memristor with the structure of Ag|graphene quantum dots (GQDs)|TiOx|F‐doped SnO2 exhibits typical bipol...
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| Format: | Article |
| Language: | English |
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Wiley
2021-07-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202003765 |
| _version_ | 1818580385211088896 |
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| author | Guangdong Zhou Bai Sun Xiaofang Hu Linfeng Sun Zhuo Zou Bo Xiao Wuke Qiu Bo Wu Jie Li Juanjuan Han Liping Liao Cunyun Xu Gang Xiao Lihua Xiao Jianbo Cheng Shaohui Zheng Lidan Wang Qunliang Song Shukai Duan |
| author_facet | Guangdong Zhou Bai Sun Xiaofang Hu Linfeng Sun Zhuo Zou Bo Xiao Wuke Qiu Bo Wu Jie Li Juanjuan Han Liping Liao Cunyun Xu Gang Xiao Lihua Xiao Jianbo Cheng Shaohui Zheng Lidan Wang Qunliang Song Shukai Duan |
| author_sort | Guangdong Zhou |
| collection | DOAJ |
| description | Abstract The negative photoconductance (NPC) effect, defined as an increase in resistance upon exposure to illumination, holds great potential for application in photoelectric devices. A prepared memristor with the structure of Ag|graphene quantum dots (GQDs)|TiOx|F‐doped SnO2 exhibits typical bipolar resistive switching (RS) memory behavior. The NPC effect is impressively observed in the high resistance state branch of the RS memory, enabling the memristor function to be extended to both memory logic display and multistate data storage. The observed NPC effect is attributed to the excitation, migration, and compensation of oxygen vacancy at the GQDs/TiOx interface, at which the electron transportation is efficiently restricted because of the variation in the charge distribution and electrostatic potential under illumination. Experiments, theoretical calculations, and physical models are used to provide engineer the interface with the aim of building the NPC effect in the memristive device. These results unveil a new horizon on extending the functionality of the memristor. |
| first_indexed | 2024-12-16T07:16:45Z |
| format | Article |
| id | doaj.art-fd61efcc8ca2467698bd622848257324 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-16T07:16:45Z |
| publishDate | 2021-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-fd61efcc8ca2467698bd6228482573242022-12-21T22:39:46ZengWileyAdvanced Science2198-38442021-07-01813n/an/a10.1002/advs.202003765Negative Photoconductance Effect: An Extension Function of the TiOx‐Based MemristorGuangdong Zhou0Bai Sun1Xiaofang Hu2Linfeng Sun3Zhuo Zou4Bo Xiao5Wuke Qiu6Bo Wu7Jie Li8Juanjuan Han9Liping Liao10Cunyun Xu11Gang Xiao12Lihua Xiao13Jianbo Cheng14Shaohui Zheng15Lidan Wang16Qunliang Song17Shukai Duan18College of Artificial Intelligence Brain‐inspired Computing & Intelligent Control of Chongqing Key Lab Southwest University Chongqing 400715 ChinaDepartment of Mechanics and Mechatronics Engineering Centre for Advanced Materials Joining Waterloo Institute for Nanotechnology University of Waterloo Waterloo Ontario N2L 3G1 CanadaCollege of Artificial Intelligence Brain‐inspired Computing & Intelligent Control of Chongqing Key Lab Southwest University Chongqing 400715 ChinaDepartment of Energy Science Sungkyunkwan University Suwon 16419 KoreaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaCollege of Chemistry and Chemical Engineering Yantai University Yantai 264005 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaSchool of Physics and Electronic Science Zunyi Normal University Zunyi 563006 ChinaCollege of Artificial Intelligence Brain‐inspired Computing & Intelligent Control of Chongqing Key Lab Southwest University Chongqing 400715 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaGuizhou Institute of Technology Guiyang 350003 ChinaCollege of Chemistry and Chemical Engineering Yantai University Yantai 264005 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaCollege of Artificial Intelligence Brain‐inspired Computing & Intelligent Control of Chongqing Key Lab Southwest University Chongqing 400715 ChinaSchool of Materials and Energy Southwest University Chongqing 400715 ChinaCollege of Artificial Intelligence Brain‐inspired Computing & Intelligent Control of Chongqing Key Lab Southwest University Chongqing 400715 ChinaAbstract The negative photoconductance (NPC) effect, defined as an increase in resistance upon exposure to illumination, holds great potential for application in photoelectric devices. A prepared memristor with the structure of Ag|graphene quantum dots (GQDs)|TiOx|F‐doped SnO2 exhibits typical bipolar resistive switching (RS) memory behavior. The NPC effect is impressively observed in the high resistance state branch of the RS memory, enabling the memristor function to be extended to both memory logic display and multistate data storage. The observed NPC effect is attributed to the excitation, migration, and compensation of oxygen vacancy at the GQDs/TiOx interface, at which the electron transportation is efficiently restricted because of the variation in the charge distribution and electrostatic potential under illumination. Experiments, theoretical calculations, and physical models are used to provide engineer the interface with the aim of building the NPC effect in the memristive device. These results unveil a new horizon on extending the functionality of the memristor.https://doi.org/10.1002/advs.202003765graphene quantum dotsmemory logic displaynegative photoconductance effectTiOx‐based memristor |
| spellingShingle | Guangdong Zhou Bai Sun Xiaofang Hu Linfeng Sun Zhuo Zou Bo Xiao Wuke Qiu Bo Wu Jie Li Juanjuan Han Liping Liao Cunyun Xu Gang Xiao Lihua Xiao Jianbo Cheng Shaohui Zheng Lidan Wang Qunliang Song Shukai Duan Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor Advanced Science graphene quantum dots memory logic display negative photoconductance effect TiOx‐based memristor |
| title | Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor |
| title_full | Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor |
| title_fullStr | Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor |
| title_full_unstemmed | Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor |
| title_short | Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor |
| title_sort | negative photoconductance effect an extension function of the tiox based memristor |
| topic | graphene quantum dots memory logic display negative photoconductance effect TiOx‐based memristor |
| url | https://doi.org/10.1002/advs.202003765 |
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