STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION
The steady-state injection into a semiconductor region was studied by many authors and various solutions were achieved. The solutions gave the distribution of carriers inside such a region to aid in understanding devices operation. But extending this problem to a lightly doped semiconductor region...
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Format: | Article |
Language: | English |
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University of Baghdad
2003-09-01
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Series: | Journal of Engineering |
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Online Access: | https://www.joe.uobaghdad.edu.iq/index.php/main/article/view/3031 |
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author | S.M. Abu Nailah O.M. Kazalachi |
author_facet | S.M. Abu Nailah O.M. Kazalachi |
author_sort | S.M. Abu Nailah |
collection | DOAJ |
description |
The steady-state injection into a semiconductor region was studied by many authors and various solutions were achieved.
The solutions gave the distribution of carriers inside such a region to aid in understanding devices operation. But extending this problem to a lightly doped semiconductor region was tackled by only few authors, and the solutions achieved were either numerical or analytical however, the analytical solution were sufiering from crude approximations,. This paper gives a realistic analytical solution, which considers both monomolecular and bimolecular recombination factors.
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first_indexed | 2024-04-24T14:08:16Z |
format | Article |
id | doaj.art-fd8c7a56e5dd40a68a125b198b1bda2e |
institution | Directory Open Access Journal |
issn | 1726-4073 2520-3339 |
language | English |
last_indexed | 2024-04-24T14:08:16Z |
publishDate | 2003-09-01 |
publisher | University of Baghdad |
record_format | Article |
series | Journal of Engineering |
spelling | doaj.art-fd8c7a56e5dd40a68a125b198b1bda2e2024-04-03T09:57:27ZengUniversity of BaghdadJournal of Engineering1726-40732520-33392003-09-0180310.31026/j.eng.2002.03.06STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGIONS.M. Abu NailahO.M. Kazalachi The steady-state injection into a semiconductor region was studied by many authors and various solutions were achieved. The solutions gave the distribution of carriers inside such a region to aid in understanding devices operation. But extending this problem to a lightly doped semiconductor region was tackled by only few authors, and the solutions achieved were either numerical or analytical however, the analytical solution were sufiering from crude approximations,. This paper gives a realistic analytical solution, which considers both monomolecular and bimolecular recombination factors. https://www.joe.uobaghdad.edu.iq/index.php/main/article/view/3031physics of semiconductors, bipolar transistor |
spellingShingle | S.M. Abu Nailah O.M. Kazalachi STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION Journal of Engineering physics of semiconductors, bipolar transistor |
title | STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION |
title_full | STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION |
title_fullStr | STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION |
title_full_unstemmed | STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION |
title_short | STBADY.STATB INJECTION INTO A LIGHTLY DOPED REGION |
title_sort | stbady statb injection into a lightly doped region |
topic | physics of semiconductors, bipolar transistor |
url | https://www.joe.uobaghdad.edu.iq/index.php/main/article/view/3031 |
work_keys_str_mv | AT smabunailah stbadystatbinjectionintoalightlydopedregion AT omkazalachi stbadystatbinjectionintoalightlydopedregion |