Investigation of photoconductivity in n-type Galium doped PbTe
Persistent photoconductivity at low temperature in PbTe + 0.4 at.% Ga has been investigated using kinetic equations which describe the transport process on DX-like impurity centers. Measured and calculated photoconductivity as a function of illumination and temperature is presented. Experimental res...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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International Institute for the Science of Sintering, Beograd
2007-01-01
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| Series: | Science of Sintering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/0350-820X/2007/0350-820X0702169S.pdf |
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| author | Stojanović D. Romčević N. Trajić J. Hadžić B. Romčević M. Khokhlov D.R. |
| author_facet | Stojanović D. Romčević N. Trajić J. Hadžić B. Romčević M. Khokhlov D.R. |
| author_sort | Stojanović D. |
| collection | DOAJ |
| description | Persistent photoconductivity at low temperature in PbTe + 0.4 at.% Ga has been investigated using kinetic equations which describe the transport process on DX-like impurity centers. Measured and calculated photoconductivity as a function of illumination and temperature is presented. Experimental results are interpreted assuming the mixed valence of Ga in lead telluride and the formation of centers with negative correlation energy. Numeric values of the mathematical model constant at steady state are calculated by comparing the measured and calculated temperature dependence of the resistivity and carrier concentrations for illuminated and unilluminated n-type samples. Thus, the positions and concentrations of different impurity states are determined. . |
| first_indexed | 2024-12-19T02:32:46Z |
| format | Article |
| id | doaj.art-fdaa59590f5740eb982e3f38f1c55504 |
| institution | Directory Open Access Journal |
| issn | 0350-820X |
| language | English |
| last_indexed | 2024-12-19T02:32:46Z |
| publishDate | 2007-01-01 |
| publisher | International Institute for the Science of Sintering, Beograd |
| record_format | Article |
| series | Science of Sintering |
| spelling | doaj.art-fdaa59590f5740eb982e3f38f1c555042022-12-21T20:39:34ZengInternational Institute for the Science of Sintering, BeogradScience of Sintering0350-820X2007-01-0139216917510.2298/SOS0702169SInvestigation of photoconductivity in n-type Galium doped PbTeStojanović D.Romčević N.Trajić J.Hadžić B.Romčević M.Khokhlov D.R.Persistent photoconductivity at low temperature in PbTe + 0.4 at.% Ga has been investigated using kinetic equations which describe the transport process on DX-like impurity centers. Measured and calculated photoconductivity as a function of illumination and temperature is presented. Experimental results are interpreted assuming the mixed valence of Ga in lead telluride and the formation of centers with negative correlation energy. Numeric values of the mathematical model constant at steady state are calculated by comparing the measured and calculated temperature dependence of the resistivity and carrier concentrations for illuminated and unilluminated n-type samples. Thus, the positions and concentrations of different impurity states are determined. .http://www.doiserbia.nb.rs/img/doi/0350-820X/2007/0350-820X0702169S.pdfalloysDX-like centerphotoconductivity |
| spellingShingle | Stojanović D. Romčević N. Trajić J. Hadžić B. Romčević M. Khokhlov D.R. Investigation of photoconductivity in n-type Galium doped PbTe Science of Sintering alloys DX-like center photoconductivity |
| title | Investigation of photoconductivity in n-type Galium doped PbTe |
| title_full | Investigation of photoconductivity in n-type Galium doped PbTe |
| title_fullStr | Investigation of photoconductivity in n-type Galium doped PbTe |
| title_full_unstemmed | Investigation of photoconductivity in n-type Galium doped PbTe |
| title_short | Investigation of photoconductivity in n-type Galium doped PbTe |
| title_sort | investigation of photoconductivity in n type galium doped pbte |
| topic | alloys DX-like center photoconductivity |
| url | http://www.doiserbia.nb.rs/img/doi/0350-820X/2007/0350-820X0702169S.pdf |
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