Competing phases in epitaxial vanadium dioxide at nanoscale
Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO2) exhibits a strong competition between insulat...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5115784 |
| _version_ | 1818180722018484224 |
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| author | Yogesh Sharma Martin V. Holt Nouamane Laanait Xiang Gao Ilia N. Ivanov Liam Collins Changhee Sohn Zhaoliang Liao Elizabeth Skoropata Sergei V. Kalinin Nina Balke Gyula Eres Thomas Z. Ward Ho Nyung Lee |
| author_facet | Yogesh Sharma Martin V. Holt Nouamane Laanait Xiang Gao Ilia N. Ivanov Liam Collins Changhee Sohn Zhaoliang Liao Elizabeth Skoropata Sergei V. Kalinin Nina Balke Gyula Eres Thomas Z. Ward Ho Nyung Lee |
| author_sort | Yogesh Sharma |
| collection | DOAJ |
| description | Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films. |
| first_indexed | 2024-12-11T21:24:17Z |
| format | Article |
| id | doaj.art-fdb271f291e241fa8993f180f7b9717e |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-11T21:24:17Z |
| publishDate | 2019-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-fdb271f291e241fa8993f180f7b9717e2022-12-22T00:50:22ZengAIP Publishing LLCAPL Materials2166-532X2019-08-0178081127081127-610.1063/1.5115784026908APMCompeting phases in epitaxial vanadium dioxide at nanoscaleYogesh Sharma0Martin V. Holt1Nouamane Laanait2Xiang Gao3Ilia N. Ivanov4Liam Collins5Changhee Sohn6Zhaoliang Liao7Elizabeth Skoropata8Sergei V. Kalinin9Nina Balke10Gyula Eres11Thomas Z. Ward12Ho Nyung Lee13Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USACenter for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USACenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USACenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USACenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USACenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USACenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAPhase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, the correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases, which is important for practical applications. However, the phase boundary undergoes a strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The competing phases of the films are imaged by multilength-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates the critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.http://dx.doi.org/10.1063/1.5115784 |
| spellingShingle | Yogesh Sharma Martin V. Holt Nouamane Laanait Xiang Gao Ilia N. Ivanov Liam Collins Changhee Sohn Zhaoliang Liao Elizabeth Skoropata Sergei V. Kalinin Nina Balke Gyula Eres Thomas Z. Ward Ho Nyung Lee Competing phases in epitaxial vanadium dioxide at nanoscale APL Materials |
| title | Competing phases in epitaxial vanadium dioxide at nanoscale |
| title_full | Competing phases in epitaxial vanadium dioxide at nanoscale |
| title_fullStr | Competing phases in epitaxial vanadium dioxide at nanoscale |
| title_full_unstemmed | Competing phases in epitaxial vanadium dioxide at nanoscale |
| title_short | Competing phases in epitaxial vanadium dioxide at nanoscale |
| title_sort | competing phases in epitaxial vanadium dioxide at nanoscale |
| url | http://dx.doi.org/10.1063/1.5115784 |
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