Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics
For the research of the performance of vibration-assisted roller polishing (VARP) on the silicon carbides (SiC), a new decoupling device was designed. By introducing the fully symmetrical structure and the double parallel four-bar mechanism, the movement in the X and Y directions is decoupled. The d...
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IEEE
2020-01-01
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Series: | IEEE Access |
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Online Access: | https://ieeexplore.ieee.org/document/9285247/ |
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author | Yan Gu Ao Liu Jieqiong Lin Xiuyuan Chen Faxiang Lu En Sun |
author_facet | Yan Gu Ao Liu Jieqiong Lin Xiuyuan Chen Faxiang Lu En Sun |
author_sort | Yan Gu |
collection | DOAJ |
description | For the research of the performance of vibration-assisted roller polishing (VARP) on the silicon carbides (SiC), a new decoupling device was designed. By introducing the fully symmetrical structure and the double parallel four-bar mechanism, the movement in the X and Y directions is decoupled. The dynamic and static characteristics of the device are analyzed using finite element analysis. Testing experiments were conducted to investigate the actual performance of the developed device. The results show that the coupling rate of the x-axis and y-axis are about 1.6% and 1.4%, respectively. The working space of the device is about 38μm×42μm, and the natural inherent is about 1198Hz. In addition, a VARP force model for SiC was established to help scientifically understand the removal mechanism. The polishing experiments are carried out to verify the feasibility of the model and the effectiveness of the device. The experimental results show that the maximum error between the model results and the measured force is about 7.7%. As the amplitude and frequency of the device increase, the surface roughness of the SiC decreases from 168nm without vibration to 54nm and 47nm, respectively. |
first_indexed | 2024-12-19T07:34:04Z |
format | Article |
id | doaj.art-fdbb4077cd7f44b5ab753a657d6deae0 |
institution | Directory Open Access Journal |
issn | 2169-3536 |
language | English |
last_indexed | 2024-12-19T07:34:04Z |
publishDate | 2020-01-01 |
publisher | IEEE |
record_format | Article |
series | IEEE Access |
spelling | doaj.art-fdbb4077cd7f44b5ab753a657d6deae02022-12-21T20:30:38ZengIEEEIEEE Access2169-35362020-01-01821909821911310.1109/ACCESS.2020.30429969285247Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide CeramicsYan Gu0https://orcid.org/0000-0001-5468-6843Ao Liu1Jieqiong Lin2https://orcid.org/0000-0003-4394-360XXiuyuan Chen3Faxiang Lu4En Sun5Key Laboratory of Micro-Nano and Ultra-Precision Manufacturing of Jilin Province, School of Mechatronic Engineering, Changchun University of Technology, Changchun, ChinaKey Laboratory of Micro-Nano and Ultra-Precision Manufacturing of Jilin Province, School of Mechatronic Engineering, Changchun University of Technology, Changchun, ChinaKey Laboratory of Micro-Nano and Ultra-Precision Manufacturing of Jilin Province, School of Mechatronic Engineering, Changchun University of Technology, Changchun, ChinaKey Laboratory of Micro-Nano and Ultra-Precision Manufacturing of Jilin Province, School of Mechatronic Engineering, Changchun University of Technology, Changchun, ChinaKey Laboratory of Micro-Nano and Ultra-Precision Manufacturing of Jilin Province, School of Mechatronic Engineering, Changchun University of Technology, Changchun, ChinaKey Laboratory of Micro-Nano and Ultra-Precision Manufacturing of Jilin Province, School of Mechatronic Engineering, Changchun University of Technology, Changchun, ChinaFor the research of the performance of vibration-assisted roller polishing (VARP) on the silicon carbides (SiC), a new decoupling device was designed. By introducing the fully symmetrical structure and the double parallel four-bar mechanism, the movement in the X and Y directions is decoupled. The dynamic and static characteristics of the device are analyzed using finite element analysis. Testing experiments were conducted to investigate the actual performance of the developed device. The results show that the coupling rate of the x-axis and y-axis are about 1.6% and 1.4%, respectively. The working space of the device is about 38μm×42μm, and the natural inherent is about 1198Hz. In addition, a VARP force model for SiC was established to help scientifically understand the removal mechanism. The polishing experiments are carried out to verify the feasibility of the model and the effectiveness of the device. The experimental results show that the maximum error between the model results and the measured force is about 7.7%. As the amplitude and frequency of the device increase, the surface roughness of the SiC decreases from 168nm without vibration to 54nm and 47nm, respectively.https://ieeexplore.ieee.org/document/9285247/Decoupling devicevibration-assisted roller polishingsilicon carbidepolishing forcesurface roughness |
spellingShingle | Yan Gu Ao Liu Jieqiong Lin Xiuyuan Chen Faxiang Lu En Sun Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics IEEE Access Decoupling device vibration-assisted roller polishing silicon carbide polishing force surface roughness |
title | Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics |
title_full | Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics |
title_fullStr | Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics |
title_full_unstemmed | Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics |
title_short | Development of Decoupling Device for Vibration-Assisted Roller Polishing of Silicon Carbide Ceramics |
title_sort | development of decoupling device for vibration assisted roller polishing of silicon carbide ceramics |
topic | Decoupling device vibration-assisted roller polishing silicon carbide polishing force surface roughness |
url | https://ieeexplore.ieee.org/document/9285247/ |
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