Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher voltage drop when the gate is off. To address this...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10243026/ |
| _version_ | 1797685408789692416 |
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| author | Dai-Jie Lin Chih-Kang Chang Kuntal Barman Yu-Chuan Chu William Shih Jian-Jang Huang |
| author_facet | Dai-Jie Lin Chih-Kang Chang Kuntal Barman Yu-Chuan Chu William Shih Jian-Jang Huang |
| author_sort | Dai-Jie Lin |
| collection | DOAJ |
| description | Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher voltage drop when the gate is off. To address this issue, we propose a dual-gate high-electron-mobility transistor (HEMT) to enhance reverse conduction. The device is modulated by the main gate electrode adjacent to the source, while a fixed bias is applied on the auxiliary gate electrode near the drain contact. We achieve a reverse conduction voltage as low as −0.16 V and 89.03 % lower reverse conduction power loss with the proposed device structure. The results can be explained by a freewheeling path between the drain electrode and the auxiliary gate, which enables effective dissipation of the stored charges. |
| first_indexed | 2024-03-12T00:44:43Z |
| format | Article |
| id | doaj.art-fdc628e9623349a48518baeebcddc8bf |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-12T00:44:43Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-fdc628e9623349a48518baeebcddc8bf2023-09-14T23:00:50ZengIEEEIEEE Access2169-35362023-01-0111984529845710.1109/ACCESS.2023.331272610243026Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On VoltageDai-Jie Lin0https://orcid.org/0009-0000-8175-0759Chih-Kang Chang1Kuntal Barman2Yu-Chuan Chu3William Shih4Jian-Jang Huang5https://orcid.org/0000-0002-5761-2177Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanTaiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, TaiwanGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanDepartment of Electrical and Computer Engineering, University of California at Los Angeles, Los Angeles, CA, USAGraduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, TaiwanThird quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher voltage drop when the gate is off. To address this issue, we propose a dual-gate high-electron-mobility transistor (HEMT) to enhance reverse conduction. The device is modulated by the main gate electrode adjacent to the source, while a fixed bias is applied on the auxiliary gate electrode near the drain contact. We achieve a reverse conduction voltage as low as −0.16 V and 89.03 % lower reverse conduction power loss with the proposed device structure. The results can be explained by a freewheeling path between the drain electrode and the auxiliary gate, which enables effective dissipation of the stored charges.https://ieeexplore.ieee.org/document/10243026/Dual-gate (DG) structureGaNHEMTreverse conduction |
| spellingShingle | Dai-Jie Lin Chih-Kang Chang Kuntal Barman Yu-Chuan Chu William Shih Jian-Jang Huang Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage IEEE Access Dual-gate (DG) structure GaN HEMT reverse conduction |
| title | Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage |
| title_full | Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage |
| title_fullStr | Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage |
| title_full_unstemmed | Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage |
| title_short | Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage |
| title_sort | normally off algan gan hemts with a low reverse conduction turn on voltage |
| topic | Dual-gate (DG) structure GaN HEMT reverse conduction |
| url | https://ieeexplore.ieee.org/document/10243026/ |
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