Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses. However, typical gallium nitride (GaN) transistors have a higher voltage drop when the gate is off. To address this...

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Bibliographic Details
Main Authors: Dai-Jie Lin, Chih-Kang Chang, Kuntal Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Dual-gate (DG) structure
GaN
HEMT
reverse conduction
Online Access:https://ieeexplore.ieee.org/document/10243026/

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