First principles analysis on the stability of C, Sn atoms near the surface of Ge thin film
To apply the germanium (Ge) thin film for various electronic devices, energy band structure should be controlled by carbon (C) and/or Tin (Sn) doping. It is important to understand the stable atomic configurations of C and Sn atoms near the (001) surface of a Ge thin film. In this study, first princ...
| Main Authors: | , |
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| Format: | Article |
| Language: | Japanese |
| Published: |
The Japan Society of Mechanical Engineers
2018-02-01
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| Series: | Nihon Kikai Gakkai ronbunshu |
| Subjects: | |
| Online Access: | https://www.jstage.jst.go.jp/article/transjsme/84/858/84_17-00542/_pdf/-char/en |