Bending strain engineering in quantum spin hall system for controlling spin currents
Strain engineering alters the topological properties of quantum spin Hall insulators, leading to potential applications in spintronics. Here the authors demonstrate that bending strain can be used to tune the spin transport properties and generate a non-zero spin current in curved in Bi/Cl/Si nanofi...
Main Authors: | Bing Huang, Kyung-Hwan Jin, Bin Cui, Feng Zhai, Jiawei Mei, Feng Liu |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2017-06-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms15850 |
Similar Items
-
TOPICAL REVIEW: Spin current, spin accumulation and spin Hall effect
by: Saburo Takahashi and Sadamichi Maekawa
Published: (2008-01-01) -
Dirty quantum Hall ferromagnets and quantum Hall spin glasses
by: Lee, D, et al.
Published: (2002) -
Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet
by: Heng Gao, et al.
Published: (2018-05-01) -
Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching
by: Soogil Lee, et al.
Published: (2021-11-01) -
Dynamical spin-to-charge conversion on the edge of quantum spin Hall insulator
by: Yasufumi Araki, et al.
Published: (2020-05-01)