Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy
Abstract Grain boundaries (GBs) are one- or two-dimensional (2D) defects, which are universal in crystals and play a crucial role in determining their mechanical, electrical, optical, and thermoelectric properties. In general, GBs tend to decrease electrical or thermal conductivity, and consequently...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2023-07-01
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| Series: | Applied Microscopy |
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| Online Access: | https://doi.org/10.1186/s42649-023-00088-3 |
| _version_ | 1797773925813321728 |
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| author | Hyo Won Kim |
| author_facet | Hyo Won Kim |
| author_sort | Hyo Won Kim |
| collection | DOAJ |
| description | Abstract Grain boundaries (GBs) are one- or two-dimensional (2D) defects, which are universal in crystals and play a crucial role in determining their mechanical, electrical, optical, and thermoelectric properties. In general, GBs tend to decrease electrical or thermal conductivity, and consequently degrade the performance of devices. However, the unusual characteristics of GBs have led to the production of a new class of memristors with 2D semiconducting transition metal dichalcogenides (TMDs) and the creation of conducting channels in 2D topological insulators. Therefore, understanding the nature of GBs and their influence on device applications emphasizes the importance of GB engineering for future 2D TMD-based devices. This review discusses recent progress made in the investigation of various roles of GBs in 2D TMDs characterized via scanning tunneling microscopy/spectroscopy. |
| first_indexed | 2024-03-12T22:12:31Z |
| format | Article |
| id | doaj.art-fdd6cb52052b4a1aa55b8db43b02632b |
| institution | Directory Open Access Journal |
| issn | 2287-4445 |
| language | English |
| last_indexed | 2024-03-12T22:12:31Z |
| publishDate | 2023-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Applied Microscopy |
| spelling | doaj.art-fdd6cb52052b4a1aa55b8db43b02632b2023-07-23T11:30:16ZengSpringerOpenApplied Microscopy2287-44452023-07-015311910.1186/s42649-023-00088-3Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopyHyo Won Kim0Samsung Advanced Institute of TechnologyAbstract Grain boundaries (GBs) are one- or two-dimensional (2D) defects, which are universal in crystals and play a crucial role in determining their mechanical, electrical, optical, and thermoelectric properties. In general, GBs tend to decrease electrical or thermal conductivity, and consequently degrade the performance of devices. However, the unusual characteristics of GBs have led to the production of a new class of memristors with 2D semiconducting transition metal dichalcogenides (TMDs) and the creation of conducting channels in 2D topological insulators. Therefore, understanding the nature of GBs and their influence on device applications emphasizes the importance of GB engineering for future 2D TMD-based devices. This review discusses recent progress made in the investigation of various roles of GBs in 2D TMDs characterized via scanning tunneling microscopy/spectroscopy.https://doi.org/10.1186/s42649-023-00088-3Transition metal dichalcogenidesGrain boundaryScanning tunneling microscopyScanning tunneling spectroscopyNonsymmorphic symmetry |
| spellingShingle | Hyo Won Kim Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy Applied Microscopy Transition metal dichalcogenides Grain boundary Scanning tunneling microscopy Scanning tunneling spectroscopy Nonsymmorphic symmetry |
| title | Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy |
| title_full | Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy |
| title_fullStr | Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy |
| title_full_unstemmed | Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy |
| title_short | Recent progress in the role of grain boundaries in two-dimensional transition metal dichalcogenides studied using scanning tunneling microscopy/spectroscopy |
| title_sort | recent progress in the role of grain boundaries in two dimensional transition metal dichalcogenides studied using scanning tunneling microscopy spectroscopy |
| topic | Transition metal dichalcogenides Grain boundary Scanning tunneling microscopy Scanning tunneling spectroscopy Nonsymmorphic symmetry |
| url | https://doi.org/10.1186/s42649-023-00088-3 |
| work_keys_str_mv | AT hyowonkim recentprogressintheroleofgrainboundariesintwodimensionaltransitionmetaldichalcogenidesstudiedusingscanningtunnelingmicroscopyspectroscopy |