Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for whic...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-06-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/9/6/305 |
| _version_ | 1818040494657110016 |
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| author | Maxim A. Ladugin Irina V. Yarotskaya Timur A. Bagaev Konstantin Yu. Telegin Andrey Yu. Andreev Ivan I. Zasavitskii Anatoliy A. Padalitsa Alexander A. Marmalyuk |
| author_facet | Maxim A. Ladugin Irina V. Yarotskaya Timur A. Bagaev Konstantin Yu. Telegin Andrey Yu. Andreev Ivan I. Zasavitskii Anatoliy A. Padalitsa Alexander A. Marmalyuk |
| author_sort | Maxim A. Ladugin |
| collection | DOAJ |
| description | AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500−2000 layers. |
| first_indexed | 2024-12-10T08:15:25Z |
| format | Article |
| id | doaj.art-fde2075ab81f45589610d7f7d914f337 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-12-10T08:15:25Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-fde2075ab81f45589610d7f7d914f3372022-12-22T01:56:29ZengMDPI AGCrystals2073-43522019-06-019630510.3390/cryst9060305cryst9060305Advanced AlGaAs/GaAs Heterostructures Grown by MOVPEMaxim A. Ladugin0Irina V. Yarotskaya1Timur A. Bagaev2Konstantin Yu. Telegin3Andrey Yu. Andreev4Ivan I. Zasavitskii5Anatoliy A. Padalitsa6Alexander A. Marmalyuk7Sigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaSigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaSigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaSigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaSigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaLebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii prosp., Moscow 119991, RussiaSigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaSigm Plus Co., 3 Vvedenskogo str., Moscow 117342, RussiaAlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for which a conventional approach of growing such heterostructures is insufficient and the development of new growth procedures is needed. This article summarizes our work on the metalorganic vapour-phase epitaxy (MOVPE) growth of AlGaAs/GaAs heterostructures for modern infrared devices. The growth approaches presented allow for the improved output characteristics of different emitting devices such as multi active region lasers, epitaxially integrated via highly doped tunnel junctions (emission wavelength λ ~ 1 μm), quantum cascade lasers (λ ~10 μm) and THz laser (λ ~100 μm), based on short-period superlattice with 500−2000 layers.https://www.mdpi.com/2073-4352/9/6/305MOVPEAlGaAs/GaAsepitaxial integrationmechanical stresssuperlatticequantum cascade laser |
| spellingShingle | Maxim A. Ladugin Irina V. Yarotskaya Timur A. Bagaev Konstantin Yu. Telegin Andrey Yu. Andreev Ivan I. Zasavitskii Anatoliy A. Padalitsa Alexander A. Marmalyuk Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE Crystals MOVPE AlGaAs/GaAs epitaxial integration mechanical stress superlattice quantum cascade laser |
| title | Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE |
| title_full | Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE |
| title_fullStr | Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE |
| title_full_unstemmed | Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE |
| title_short | Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE |
| title_sort | advanced algaas gaas heterostructures grown by movpe |
| topic | MOVPE AlGaAs/GaAs epitaxial integration mechanical stress superlattice quantum cascade laser |
| url | https://www.mdpi.com/2073-4352/9/6/305 |
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