Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up to 1000 periods) and uniformity, for whic...

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Bibliographic Details
Main Authors:	Maxim A. Ladugin, Irina V. Yarotskaya, Timur A. Bagaev, Konstantin Yu. Telegin, Andrey Yu. Andreev, Ivan I. Zasavitskii, Anatoliy A. Padalitsa, Alexander A. Marmalyuk
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Crystals
Subjects:	MOVPE AlGaAs/GaAs epitaxial integration mechanical stress superlattice quantum cascade laser
Online Access:	https://www.mdpi.com/2073-4352/9/6/305

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