Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering
Zinc oxide (ZnO) has attracted significant interest due to its exceptional material characteristics like its wide band gap (3.37 eV) and the high exciton binding energy. However, the application of ZnO is constrained by the difficulty in obtaining P-type samples. In this study, p- type ZnO thin film...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-01-01
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| Series: | Journal of King Saud University: Science |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S1018364720303335 |
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| author | A. Ismail M.J. Abdullah M.A. Qaeed Mohammed A. Khamis Bandar Ali AL-Asbahi Saif M. Qaid W.A. Farooq |
| author_facet | A. Ismail M.J. Abdullah M.A. Qaeed Mohammed A. Khamis Bandar Ali AL-Asbahi Saif M. Qaid W.A. Farooq |
| author_sort | A. Ismail |
| collection | DOAJ |
| description | Zinc oxide (ZnO) has attracted significant interest due to its exceptional material characteristics like its wide band gap (3.37 eV) and the high exciton binding energy. However, the application of ZnO is constrained by the difficulty in obtaining P-type samples. In this study, p- type ZnO thin films were fabricated using the co-doping technique with ZnO and AlN targets. Different RF powers were used for ZnO to deposite the films. However, the power on AlN target was fixed at 90 W. The structural, optical and electrical properties of the prepared films were inspected. The results of XRD showed that all the films exhibited ZnO (002) peak of wurzite structure. The UV emission peaks (3.24 eV–3.53 eV) identified in PL spectra is possibly due to the recombination of free excitons. The Raman peaks which shown at 576.22 cm−1 and 274 cm−1 denote ZnO:AlN and ZnO:N respectively. The Hall measurements of the films deposited at RF powers of 250 W and 200 W for ZnO target exhibited n-type conduction with corresponding mobilities of 2.75 cm2 V−1 s−1 and 1.58 cm2 V−1 s−1 respectively with electron concentrations of 2.35 × 1018cm−3 and 5.26 × 1018cm−3, respectively. However, the films deposited using RF powers of (150, 175) W and 225 W for ZnO target exhibited p-type conduction with hole concentrations of 2.14 × 1017 cm−3, 2.37 × 1019 cm−3 and 3.68 × 1021 cm−3 with corresponding mobilities of 9.21 cm2 V−1 s−1, 0.129 cm2 V−1 s−1 and 3.41 × 10−3 cm2 V−1 s−1 respectively. Therefore, RF power values of (150, 175) W and 225 W might be ideal for dopants activation to obtain p-type ZnO. |
| first_indexed | 2024-12-16T12:55:15Z |
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| id | doaj.art-fe1721003c4b4aa0947808672cbf4278 |
| institution | Directory Open Access Journal |
| issn | 1018-3647 |
| language | English |
| last_indexed | 2024-12-16T12:55:15Z |
| publishDate | 2021-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of King Saud University: Science |
| spelling | doaj.art-fe1721003c4b4aa0947808672cbf42782022-12-21T22:31:02ZengElsevierJournal of King Saud University: Science1018-36472021-01-01331101229Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputteringA. Ismail0M.J. Abdullah1M.A. Qaeed2Mohammed A. Khamis3Bandar Ali AL-Asbahi4Saif M. Qaid5W.A. Farooq6Department of Physics, University of Hafr Al Batin, 31991, Saudi ArabiaSchool of Physics, Universiti Sains Malaysia, 11800 Penang, MalaysiaDepartment of Physics, Faculty of Science, University of Jeddah, Saudi ArabiaDepartment of Petroleum and Natural Gas Engineering, King Saud University, Saudi Arabia; Corresponding author.Department of Physics & Astronomy, College of Sciences, King Saud University, Saudi Arabia; Department of Physics, Faculty of Science, Sana'a University, YemenDepartment of Physics & Astronomy, College of Sciences, King Saud University, Saudi Arabia; Department of Physics, Faculty of Science, Ibb University, YemenDepartment of Physics & Astronomy, College of Sciences, King Saud University, Saudi ArabiaZinc oxide (ZnO) has attracted significant interest due to its exceptional material characteristics like its wide band gap (3.37 eV) and the high exciton binding energy. However, the application of ZnO is constrained by the difficulty in obtaining P-type samples. In this study, p- type ZnO thin films were fabricated using the co-doping technique with ZnO and AlN targets. Different RF powers were used for ZnO to deposite the films. However, the power on AlN target was fixed at 90 W. The structural, optical and electrical properties of the prepared films were inspected. The results of XRD showed that all the films exhibited ZnO (002) peak of wurzite structure. The UV emission peaks (3.24 eV–3.53 eV) identified in PL spectra is possibly due to the recombination of free excitons. The Raman peaks which shown at 576.22 cm−1 and 274 cm−1 denote ZnO:AlN and ZnO:N respectively. The Hall measurements of the films deposited at RF powers of 250 W and 200 W for ZnO target exhibited n-type conduction with corresponding mobilities of 2.75 cm2 V−1 s−1 and 1.58 cm2 V−1 s−1 respectively with electron concentrations of 2.35 × 1018cm−3 and 5.26 × 1018cm−3, respectively. However, the films deposited using RF powers of (150, 175) W and 225 W for ZnO target exhibited p-type conduction with hole concentrations of 2.14 × 1017 cm−3, 2.37 × 1019 cm−3 and 3.68 × 1021 cm−3 with corresponding mobilities of 9.21 cm2 V−1 s−1, 0.129 cm2 V−1 s−1 and 3.41 × 10−3 cm2 V−1 s−1 respectively. Therefore, RF power values of (150, 175) W and 225 W might be ideal for dopants activation to obtain p-type ZnO.http://www.sciencedirect.com/science/article/pii/S1018364720303335Optical propertiesZinc oxideX-ray diffractionElectrical properties |
| spellingShingle | A. Ismail M.J. Abdullah M.A. Qaeed Mohammed A. Khamis Bandar Ali AL-Asbahi Saif M. Qaid W.A. Farooq Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering Journal of King Saud University: Science Optical properties Zinc oxide X-ray diffraction Electrical properties |
| title | Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering |
| title_full | Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering |
| title_fullStr | Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering |
| title_full_unstemmed | Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering |
| title_short | Optical and electrical characteristics of p-type AlN co-doped ZnO thin films synthesized by RF sputtering |
| title_sort | optical and electrical characteristics of p type aln co doped zno thin films synthesized by rf sputtering |
| topic | Optical properties Zinc oxide X-ray diffraction Electrical properties |
| url | http://www.sciencedirect.com/science/article/pii/S1018364720303335 |
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