Design and Analysis of Nanotube-Based Memory Cells
<p>Abstract</p> <p>In this paper, we proposed a nanoelectromechanical design as memory cells. A simple design contains a double-walled nanotube-based oscillator. Atomistic materials are deposed on the outer nanotube as electrodes. Once the WRITE voltages are applied on electrodes,...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2008-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-008-9167-8 |
| _version_ | 1797728457279406080 |
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| author | Andersen David Yang Weixuan Xiao Shaoping |
| author_facet | Andersen David Yang Weixuan Xiao Shaoping |
| author_sort | Andersen David |
| collection | DOAJ |
| description | <p>Abstract</p> <p>In this paper, we proposed a nanoelectromechanical design as memory cells. A simple design contains a double-walled nanotube-based oscillator. Atomistic materials are deposed on the outer nanotube as electrodes. Once the WRITE voltages are applied on electrodes, the induced electromagnetic force can overcome the interlayer friction between the inner and outer tubes so that the oscillator can provide stable oscillations. The READ voltages are employed to indicate logic 0/1 states based on the position of the inner tube. A new continuum modeling is developed in this paper to analyze large models of the proposed nanoelectromechanical design. Our simulations demonstrate the mechanisms of the proposed design as both static and dynamic random memory cells.</p> |
| first_indexed | 2024-03-12T11:14:13Z |
| format | Article |
| id | doaj.art-fe23b198dcbc4663ae2eb550de55713b |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T11:14:13Z |
| publishDate | 2008-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-fe23b198dcbc4663ae2eb550de55713b2023-09-02T02:29:29ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2008-01-01311416420Design and Analysis of Nanotube-Based Memory CellsAndersen DavidYang WeixuanXiao Shaoping<p>Abstract</p> <p>In this paper, we proposed a nanoelectromechanical design as memory cells. A simple design contains a double-walled nanotube-based oscillator. Atomistic materials are deposed on the outer nanotube as electrodes. Once the WRITE voltages are applied on electrodes, the induced electromagnetic force can overcome the interlayer friction between the inner and outer tubes so that the oscillator can provide stable oscillations. The READ voltages are employed to indicate logic 0/1 states based on the position of the inner tube. A new continuum modeling is developed in this paper to analyze large models of the proposed nanoelectromechanical design. Our simulations demonstrate the mechanisms of the proposed design as both static and dynamic random memory cells.</p>http://dx.doi.org/10.1007/s11671-008-9167-8Carbon nanotubeMemory cellsContinuum model |
| spellingShingle | Andersen David Yang Weixuan Xiao Shaoping Design and Analysis of Nanotube-Based Memory Cells Nanoscale Research Letters Carbon nanotube Memory cells Continuum model |
| title | Design and Analysis of Nanotube-Based Memory Cells |
| title_full | Design and Analysis of Nanotube-Based Memory Cells |
| title_fullStr | Design and Analysis of Nanotube-Based Memory Cells |
| title_full_unstemmed | Design and Analysis of Nanotube-Based Memory Cells |
| title_short | Design and Analysis of Nanotube-Based Memory Cells |
| title_sort | design and analysis of nanotube based memory cells |
| topic | Carbon nanotube Memory cells Continuum model |
| url | http://dx.doi.org/10.1007/s11671-008-9167-8 |
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