Atomic structure and mechanical response of coincident stacking faults in boron suboxide

We report the atomic structure of coincident stacking faults (SFs) in superhard boron suboxide (B6O) by combining annular bright field scanning transmission electron microscopy and quantum mechanics (QM) simulations. Different from simple SFs, which only lead to the symmetry breaking, the coincident...

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Main Authors: Kolan Madhav Reddy, Pan Liu, Yidi Shen, Takeshi Goto, Qi An, M. W. Chen
Format: Article
Language:English
Published: Taylor & Francis Group 2019-02-01
Series:Materials Research Letters
Subjects:
Online Access:http://dx.doi.org/10.1080/21663831.2018.1556184
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author Kolan Madhav Reddy
Pan Liu
Yidi Shen
Takeshi Goto
Qi An
M. W. Chen
author_facet Kolan Madhav Reddy
Pan Liu
Yidi Shen
Takeshi Goto
Qi An
M. W. Chen
author_sort Kolan Madhav Reddy
collection DOAJ
description We report the atomic structure of coincident stacking faults (SFs) in superhard boron suboxide (B6O) by combining annular bright field scanning transmission electron microscopy and quantum mechanics (QM) simulations. Different from simple SFs, which only lead to the symmetry breaking, the coincident SF junctions in the complex B6O result in local chemical configuration changes by forming an abnormal three-oxygen-atoms chain linking boron icosahedra, instead of the regular two-oxygen-atoms chain in a perfect B6O crystal. QM studies demonstrate that coincident SFs lead to the decreased shear strength under pure shear and indentation conditions and are responsible to the initial failure and amorphization of B6O.
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spelling doaj.art-fe3e7ba7cf944602a84afc537b3eb9a62022-12-21T18:39:25ZengTaylor & Francis GroupMaterials Research Letters2166-38312019-02-0172758110.1080/21663831.2018.15561841556184Atomic structure and mechanical response of coincident stacking faults in boron suboxideKolan Madhav Reddy0Pan Liu1Yidi Shen2Takeshi Goto3Qi An4M. W. Chen5Shanghai Jiao Tong UniversityShanghai Jiao Tong UniversityUniversity of Nevada RenoTohoku UniversityUniversity of Nevada RenoShanghai Jiao Tong UniversityWe report the atomic structure of coincident stacking faults (SFs) in superhard boron suboxide (B6O) by combining annular bright field scanning transmission electron microscopy and quantum mechanics (QM) simulations. Different from simple SFs, which only lead to the symmetry breaking, the coincident SF junctions in the complex B6O result in local chemical configuration changes by forming an abnormal three-oxygen-atoms chain linking boron icosahedra, instead of the regular two-oxygen-atoms chain in a perfect B6O crystal. QM studies demonstrate that coincident SFs lead to the decreased shear strength under pure shear and indentation conditions and are responsible to the initial failure and amorphization of B6O.http://dx.doi.org/10.1080/21663831.2018.1556184Boron suboxidetransmission electron microscopystacking faultshear amorphizationmechanical behavior
spellingShingle Kolan Madhav Reddy
Pan Liu
Yidi Shen
Takeshi Goto
Qi An
M. W. Chen
Atomic structure and mechanical response of coincident stacking faults in boron suboxide
Materials Research Letters
Boron suboxide
transmission electron microscopy
stacking fault
shear amorphization
mechanical behavior
title Atomic structure and mechanical response of coincident stacking faults in boron suboxide
title_full Atomic structure and mechanical response of coincident stacking faults in boron suboxide
title_fullStr Atomic structure and mechanical response of coincident stacking faults in boron suboxide
title_full_unstemmed Atomic structure and mechanical response of coincident stacking faults in boron suboxide
title_short Atomic structure and mechanical response of coincident stacking faults in boron suboxide
title_sort atomic structure and mechanical response of coincident stacking faults in boron suboxide
topic Boron suboxide
transmission electron microscopy
stacking fault
shear amorphization
mechanical behavior
url http://dx.doi.org/10.1080/21663831.2018.1556184
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