Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential

Abstract As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. Therefore, it is becoming increasingly important to interpret the adh...

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Main Authors: Eunseog Cho, Won-Joon Son, Eunae Cho, Inkook Jang, Dae Sin Kim, Kyoungmin Min
Format: Article
Language:English
Published: Nature Portfolio 2023-10-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-44265-6
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author Eunseog Cho
Won-Joon Son
Eunae Cho
Inkook Jang
Dae Sin Kim
Kyoungmin Min
author_facet Eunseog Cho
Won-Joon Son
Eunae Cho
Inkook Jang
Dae Sin Kim
Kyoungmin Min
author_sort Eunseog Cho
collection DOAJ
description Abstract As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. Therefore, it is becoming increasingly important to interpret the adhesive properties of metal interconnects at the atomic level, predict their adhesive strength and failure mode, and develop computational methods that can be universally applied regardless of interface properties. In this study, we propose a method for theoretically understanding adhesion characteristics through steering molecular dynamics simulations based on machine learning interatomic potentials. We utilized this method to investigate the adhesion characteristics of tungsten deposited on titanium nitride barrier metal (W/TiN) as a representative metal interconnect structure in devices. Pulling tests that pull two materials apart and sliding tests that pull them against each other in a shear direction were implemented to investigate the failure mode and adhesive strength depending on TiN facet orientation. We found that the W/TiN interface showed an adhesive failure where they separate from each other when tested with pulling force on Ti-rich (111) or (001) facets while cohesive failures occurred where W itself was destroyed on N-rich (111) facet. The adhesion strength was defined as the maximum force causing failure during the pulling test for consistent interpretation and the strengths of tungsten were predicted to be strongest when deposited onto N-rich (111) facet while weakest on Ti-rich (111) facet.
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spelling doaj.art-fe46068871a043f3a6551f5ebc6249df2023-11-26T13:03:15ZengNature PortfolioScientific Reports2045-23222023-10-0113111310.1038/s41598-023-44265-6Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potentialEunseog Cho0Won-Joon Son1Eunae Cho2Inkook Jang3Dae Sin Kim4Kyoungmin Min5CSE Team, Samsung ElectronicsCSE Team, Samsung ElectronicsCSE Team, Samsung ElectronicsCSE Team, Samsung ElectronicsCSE Team, Samsung ElectronicsSchool of Mechanical Engineering, Soongsil UniversityAbstract As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. Therefore, it is becoming increasingly important to interpret the adhesive properties of metal interconnects at the atomic level, predict their adhesive strength and failure mode, and develop computational methods that can be universally applied regardless of interface properties. In this study, we propose a method for theoretically understanding adhesion characteristics through steering molecular dynamics simulations based on machine learning interatomic potentials. We utilized this method to investigate the adhesion characteristics of tungsten deposited on titanium nitride barrier metal (W/TiN) as a representative metal interconnect structure in devices. Pulling tests that pull two materials apart and sliding tests that pull them against each other in a shear direction were implemented to investigate the failure mode and adhesive strength depending on TiN facet orientation. We found that the W/TiN interface showed an adhesive failure where they separate from each other when tested with pulling force on Ti-rich (111) or (001) facets while cohesive failures occurred where W itself was destroyed on N-rich (111) facet. The adhesion strength was defined as the maximum force causing failure during the pulling test for consistent interpretation and the strengths of tungsten were predicted to be strongest when deposited onto N-rich (111) facet while weakest on Ti-rich (111) facet.https://doi.org/10.1038/s41598-023-44265-6
spellingShingle Eunseog Cho
Won-Joon Son
Eunae Cho
Inkook Jang
Dae Sin Kim
Kyoungmin Min
Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
Scientific Reports
title Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
title_full Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
title_fullStr Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
title_full_unstemmed Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
title_short Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
title_sort atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential
url https://doi.org/10.1038/s41598-023-44265-6
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