Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching
Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process. The electrical properties of the PS/c-Si heterojunction were studied and adopted to obtain the electronic structure and construct the e...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2009-10-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_43069_bff291704eb88db000c2d17595ee4f95.pdf |
| Summary: | Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process. The electrical properties of the PS/c-Si heterojunction were studied and adopted to obtain the electronic structure and construct the energy band diagram of the device. This device could be used in various applications and was found to bea staggered type. |
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| ISSN: | 1681-6900 2412-0758 |