Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching
Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process. The electrical properties of the PS/c-Si heterojunction were studied and adopted to obtain the electronic structure and construct the e...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2009-10-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_43069_bff291704eb88db000c2d17595ee4f95.pdf |
| _version_ | 1827358189405863936 |
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| author | B. G. Rasheed E. T. Saleem |
| author_facet | B. G. Rasheed E. T. Saleem |
| author_sort | B. G. Rasheed |
| collection | DOAJ |
| description | Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process. The electrical properties of the PS/c-Si heterojunction were studied and adopted to obtain the electronic structure and construct the energy band diagram of the device. This device could be used in various applications and was found to bea staggered type. |
| first_indexed | 2024-03-08T06:07:10Z |
| format | Article |
| id | doaj.art-fe467d091f4c47e4a7073ccb483d2d9b |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:07:10Z |
| publishDate | 2009-10-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-fe467d091f4c47e4a7073ccb483d2d9b2024-02-04T17:50:12ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582009-10-0127142523253010.30684/etj.27.14.143069Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical EtchingB. G. RasheedE. T. SaleemPorous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process. The electrical properties of the PS/c-Si heterojunction were studied and adopted to obtain the electronic structure and construct the energy band diagram of the device. This device could be used in various applications and was found to bea staggered type.https://etj.uotechnology.edu.iq/article_43069_bff291704eb88db000c2d17595ee4f95.pdf |
| spellingShingle | B. G. Rasheed E. T. Saleem Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching Engineering and Technology Journal |
| title | Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching |
| title_full | Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching |
| title_fullStr | Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching |
| title_full_unstemmed | Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching |
| title_short | Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching |
| title_sort | electrical and electronical properties of silicon nanostructure produced by electronical etching |
| url | https://etj.uotechnology.edu.iq/article_43069_bff291704eb88db000c2d17595ee4f95.pdf |
| work_keys_str_mv | AT bgrasheed electricalandelectronicalpropertiesofsiliconnanostructureproducedbyelectronicaletching AT etsaleem electricalandelectronicalpropertiesofsiliconnanostructureproducedbyelectronicaletching |