Defect- and Interface-Induced Dielectric Loss in ZnFe<sub>2</sub>O<sub>4</sub>/ZnO/C Electromagnetic Wave Absorber

Controlling defects and interfaces in composite absorbers can effectively regulate electromagnetic (EM) parameters and enhance the electromagnetic wave (EMW) absorption ability, but the mechanism still needs to be further elucidated. In this study, ZnFe<sub>2</sub>O<sub>4</sub&g...

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Bibliographic Details
Main Authors: Hao Shen, Zhen Wang, Chun Wang, Pengfei Zou, Zhaoyang Hou, Chunlong Xu, Hongjing Wu
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/16/2871
Description
Summary:Controlling defects and interfaces in composite absorbers can effectively regulate electromagnetic (EM) parameters and enhance the electromagnetic wave (EMW) absorption ability, but the mechanism still needs to be further elucidated. In this study, ZnFe<sub>2</sub>O<sub>4</sub>/ZnO/C composite was synthesized via the hydrothermal method followed by post-annealing in different atmospheres. Defects and interfaces were characterized by Raman, PL spectroscopy, XPS and TEM, and their relationship with dielectric loss and EMW absorption performance was discussed in detail. Results show that the N<sub>2</sub>-annealed ZnFe<sub>2</sub>O<sub>4</sub>/ZnO/C composite with abundant defects and interfaces as well as an optimized composition exhibits excellent EMW dissipation ability, with a <i>RL<sub>min</sub></i> value of −17.4 dB and an <i>f<sub>e</sub></i> of 3.85 GHz at a thickness of 2.28 mm. The excellent EMW absorption performance originates from suitable impedance matching, significant conduction loss and strong dielectric loss (interfacial polarization, diploe polarization and defect polarization) dominated by lattice defects and interfaces. This study provides a view into the relationship between defects, interfaces, EM parameters and EMW absorption ability, and also suggests an effective way to promote EMW dissipation ability of the absorbers by controlling defects and interfaces.
ISSN:2079-4991