Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the pro...

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Bibliographic Details
Main Authors: Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Format: Article
Language:English
Published: SpringerOpen 2018-02-01
Series:Nanoscale Research Letters
Subjects:
Quantum dot (QD)
Annealing
Bimodal size
Molecular beam epitaxy (MBE)
Laser
Online Access:http://link.springer.com/article/10.1186/s11671-018-2472-y

Internet

http://link.springer.com/article/10.1186/s11671-018-2472-y

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