ν = 0 quantum Hall state in a cadmium arsenide thin film
Graphene and topological insulators can feature a unique quantum Hall state with a filling factor of ν = 0 that supplies a wealth of information about the nature of the underlying electronic states. Here, we report on the observation of a ν = 0 Hall state in magnetotransport experiments on a 20-nm-t...
Main Authors: | Binghao Guo, Alexander C. Lygo, Xi Dai, Susanne Stemmer |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-09-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0102703 |
Similar Items
-
Carrier mobilities of (001) cadmium arsenide films
by: Manik Goyal, et al.
Published: (2020-05-01) -
Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide
by: Arman Rashidi, et al.
Published: (2023-04-01) -
Edge mode percolation and equilibration in the topological insulator cadmium arsenide
by: Simon Munyan, et al.
Published: (2023-11-01) -
Fractional quantum Hall effect at ν=2+4/9
by: Ajit C. Balram, et al.
Published: (2020-08-01) -
Competing ν = 5/2 fractional quantum Hall states in confined geometry
by: Fu, Hailong, et al.
Published: (2017)