An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device
A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al<sub>2</sub>O<sub>3</sub>/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films presen...
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| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/11/3004 |
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| author | Sae-Wan Kim JinBeom Kwon Jae-Sung Lee Byoung-Ho Kang Sang-Won Lee Dong Geon Jung Jun-Yeop Lee Maeum Han Ok-Geun Kim Gopalan Saianand Daewoong Jung |
| author_facet | Sae-Wan Kim JinBeom Kwon Jae-Sung Lee Byoung-Ho Kang Sang-Won Lee Dong Geon Jung Jun-Yeop Lee Maeum Han Ok-Geun Kim Gopalan Saianand Daewoong Jung |
| author_sort | Sae-Wan Kim |
| collection | DOAJ |
| description | A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al<sub>2</sub>O<sub>3</sub>/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 10<sup>3</sup>. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations. |
| first_indexed | 2024-03-10T05:13:26Z |
| format | Article |
| id | doaj.art-ff2738044a484bf58ec52d527fa227b1 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T05:13:26Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ff2738044a484bf58ec52d527fa227b12023-11-23T00:41:44ZengMDPI AGNanomaterials2079-49912021-11-011111300410.3390/nano11113004An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory DeviceSae-Wan Kim0JinBeom Kwon1Jae-Sung Lee2Byoung-Ho Kang3Sang-Won Lee4Dong Geon Jung5Jun-Yeop Lee6Maeum Han7Ok-Geun Kim8Gopalan Saianand9Daewoong Jung10Advanced Mechatronics R&D Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, KoreaAdvanced Mechatronics R&D Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, KoreaAdvanced Semiconductor Research Center, Gumi Electronics and Information Technology Research Institute (GERI), Gumi 39253, KoreaAdvanced Semiconductor Research Center, Gumi Electronics and Information Technology Research Institute (GERI), Gumi 39253, KoreaDaegu Technopark Daegu Smart Manufacturing Innovation Center, 46-17, Seongseogongdan-ro, Dalseogu, Daegu 42716, KoreaAdvanced Mechatronics R&D Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, KoreaAdvanced Mechatronics R&D Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, KoreaSchool of Electronics Engineering, College of IT Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu 41566, KoreaSchool of Electronics Engineering, College of IT Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu 41566, KoreaGlobal Centre for Environmental Remediation (GCER), College of Engineering, Science and Environment, The University of Newcastle, Callaghan, NSW 2308, AustraliaAdvanced Mechatronics R&D Group, Korea Institute of Industrial Technology (KITECH), Daegu 42994, KoreaA cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al<sub>2</sub>O<sub>3</sub>/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs’ trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I–V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were −4.05 and −4.6 V. The on/off ratio at 0.5 V was 2.2 × 10<sup>3</sup>. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.https://www.mdpi.com/2079-4991/11/11/3004CdSe/ZnS quantum dotsmulti-level memoryPEDOT:PSSZnO nanoparticles |
| spellingShingle | Sae-Wan Kim JinBeom Kwon Jae-Sung Lee Byoung-Ho Kang Sang-Won Lee Dong Geon Jung Jun-Yeop Lee Maeum Han Ok-Geun Kim Gopalan Saianand Daewoong Jung An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device Nanomaterials CdSe/ZnS quantum dots multi-level memory PEDOT:PSS ZnO nanoparticles |
| title | An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device |
| title_full | An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device |
| title_fullStr | An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device |
| title_full_unstemmed | An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device |
| title_short | An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device |
| title_sort | organic inorganic nanomaterial and nanocrystal quantum dots based multi level resistive memory device |
| topic | CdSe/ZnS quantum dots multi-level memory PEDOT:PSS ZnO nanoparticles |
| url | https://www.mdpi.com/2079-4991/11/11/3004 |
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