An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device

An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al<sub>2</sub>O<sub>3</sub>/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films presen...

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Bibliographic Details
Main Authors:	Sae-Wan Kim, JinBeom Kwon, Jae-Sung Lee, Byoung-Ho Kang, Sang-Won Lee, Dong Geon Jung, Jun-Yeop Lee, Maeum Han, Ok-Geun Kim, Gopalan Saianand, Daewoong Jung
Format:	Article
Language:	English
Published:	MDPI AG 2021-11-01
Series:	Nanomaterials
Subjects:	CdSe/ZnS quantum dots multi-level memory PEDOT:PSS ZnO nanoparticles
Online Access:	https://www.mdpi.com/2079-4991/11/11/3004

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