Effects induced by high and low intensity laser plasma on SiC Schottky detectors
Silicon-Carbide detectors are extensively employed as diagnostic devices in laser-generated plasma, allowing the simultaneous detection of photons, electrons and ions, when used in time-of-flight configuration. The plasma generated by high intensity laser (1016 W/cm2) producing high energy ions was...
Main Authors: | Sciuto Antonella, Torrisi Lorenzo, Cannavò Antonino, Mazzillo Massimo, Calcagno Lucia |
---|---|
Format: | Article |
Language: | English |
Published: |
EDP Sciences
2018-01-01
|
Series: | EPJ Web of Conferences |
Online Access: | https://doi.org/10.1051/epjconf/201816703005 |
Similar Items
-
Characterization of X-ray emission from laser generated plasma
by: Cannavò Antonino, et al.
Published: (2018-01-01) -
UV-A Sensor Based on 6H-SiC Schottky Photodiode
by: Antonella Sciuto, et al.
Published: (2017-01-01) -
Plasma characterization of the gas-puff target source dedicated for soft X-ray microscopy using SiC detectors
by: Torrisi Alfio, et al.
Published: (2016-06-01) -
SiC Measurements of Electron Energy by <i>fs</i> Laser Irradiation of Thin Foils
by: Lorenzo Torrisi, et al.
Published: (2023-04-01) -
Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors
by: Jinlu Ruan, et al.
Published: (2024-10-01)