Ultrafast <italic>I<sub>D</sub></italic> – <italic>V<sub>G</sub></italic> Technique for Reliable Cryogenic Device Characterization

Ultrafast <italic>I<sub>D</sub></italic> – <italic>V<sub>G</sub></italic> Technique for Reliable Cryogenic Device Characterization

An in-depth understanding of the transient operation of devices at cryogenic temperatures remains experimentally elusive. However, the impact of these transients has recently become important in efforts to develop both electronics to support quantum information science as well as cryogenic high-perf...

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Bibliographic Details
Main Authors:	Pragya R. Shrestha, Akin Akturk, Brian Hoskins, Advait Madhavan, Jason P. Campbell
Format:	Article
Language:	English
Published:	IEEE 2023-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Cryogenic-CMOS fast I-V transient device characterization quantum electronics
Online Access:	https://ieeexplore.ieee.org/document/10077886/

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