Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We pres...

Full description

Bibliographic Details
Main Authors: Fredy Mesa, William Chamorro, William Vallejo, Robert Baier, Thomas Dittrich, Alexander Grimm, Martha C. Lux-Steiner, Sascha Sadewasser
Format: Article
Language:English
Published: Beilstein-Institut 2012-03-01
Series:Beilstein Journal of Nanotechnology
Subjects:
buffer layer
Cu3BiS3
Kelvin probe force microscopy
solar cells
Online Access:https://doi.org/10.3762/bjnano.3.31

Similar Items

Similar Items