Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application

Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application

In this paper, floating fin structured vertically stacked nanosheet gate-all-around (GAA) metal oxide semiconductor field-effect transistor (FNS) is proposed for low power logic device applications. To verify the electrical performance of the proposed device, three-dimensional (3-D) technology compu...

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Bibliographic Details
Main Authors: Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GAA MOSFET
parasitic capacitance
inverter propagation delay
dynamic power
area scaling
Online Access:https://ieeexplore.ieee.org/document/10018420/

Internet

https://ieeexplore.ieee.org/document/10018420/

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