Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability
Abstract N‐type organic semiconductors are particularly susceptible to degradation by ambient air. One such solution to this issue is to include additives in the inks these semiconductors would be cast from that would enhance device stability after film deposition. This method would reduce the numbe...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300660 |
| _version_ | 1797294374344720384 |
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| author | Samantha Brixi Chloé Dindault Benjamin King Halynne R. Lamontagne Adam J. Shuhendler Sufal Swaraj Benoît H. Lessard |
| author_facet | Samantha Brixi Chloé Dindault Benjamin King Halynne R. Lamontagne Adam J. Shuhendler Sufal Swaraj Benoît H. Lessard |
| author_sort | Samantha Brixi |
| collection | DOAJ |
| description | Abstract N‐type organic semiconductors are particularly susceptible to degradation by ambient air. One such solution to this issue is to include additives in the inks these semiconductors would be cast from that would enhance device stability after film deposition. This method would reduce the number of processing steps needed to fabricate devices compared to other stabilization methods, such as encapsulation. In this study, the stabilization of n‐type performance of the semiconductor poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,29‐bisthiophene)} (P(NDI2OD‐T2)) when it is blended with an increasing proportion by weight of poly(2‐vinylpyridine) (P2VP) is reported. The simple synthesis of P2VP also makes it an ideal candidate material for large‐scale applications. Concentrations as low as 0.1% P2VP incorporated into the P(NDI2OD‐T2) blends provided an immediate stabilization effect, and at 10% and 50%, longer‐term stability after one week is observed. |
| first_indexed | 2024-03-07T21:29:20Z |
| format | Article |
| id | doaj.art-ffaf202e75d44c72bc76cfc1eb826850 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-07T21:29:20Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-ffaf202e75d44c72bc76cfc1eb8268502024-02-27T04:06:06ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-02-01102n/an/a10.1002/aelm.202300660Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor StabilitySamantha Brixi0Chloé Dindault1Benjamin King2Halynne R. Lamontagne3Adam J. Shuhendler4Sufal Swaraj5Benoît H. Lessard6Department of Chemical and Biological Engineering University of Ottawa 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaDepartment of Chemical and Biological Engineering University of Ottawa 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaDepartment of Chemical and Biological Engineering University of Ottawa 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaDepartment of Chemical and Biological Engineering University of Ottawa 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaDepartment of Chemistry and Biomolecular Sciences University of Ottawa 150 Louis Pasteur Ottawa ON K1N 6N5 CanadaSOLEIL Synchrotron L'Orme des Merisiers Départementale 128 Saint‐Aubin 91190 FranceDepartment of Chemical and Biological Engineering University of Ottawa 161 Louis Pasteur Ottawa ON K1N 6N5 CanadaAbstract N‐type organic semiconductors are particularly susceptible to degradation by ambient air. One such solution to this issue is to include additives in the inks these semiconductors would be cast from that would enhance device stability after film deposition. This method would reduce the number of processing steps needed to fabricate devices compared to other stabilization methods, such as encapsulation. In this study, the stabilization of n‐type performance of the semiconductor poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,29‐bisthiophene)} (P(NDI2OD‐T2)) when it is blended with an increasing proportion by weight of poly(2‐vinylpyridine) (P2VP) is reported. The simple synthesis of P2VP also makes it an ideal candidate material for large‐scale applications. Concentrations as low as 0.1% P2VP incorporated into the P(NDI2OD‐T2) blends provided an immediate stabilization effect, and at 10% and 50%, longer‐term stability after one week is observed.https://doi.org/10.1002/aelm.202300660air‐stable n‐type organic thin film transistors (OTFTs)conjugated polymer blendpoly(2‐vinylpyridine) (P2VP)GIWAXSSTXM |
| spellingShingle | Samantha Brixi Chloé Dindault Benjamin King Halynne R. Lamontagne Adam J. Shuhendler Sufal Swaraj Benoît H. Lessard Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability Advanced Electronic Materials air‐stable n‐type organic thin film transistors (OTFTs) conjugated polymer blend poly(2‐vinylpyridine) (P2VP) GIWAXS STXM |
| title | Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability |
| title_full | Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability |
| title_fullStr | Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability |
| title_full_unstemmed | Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability |
| title_short | Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability |
| title_sort | poly 2 vinylpyridine as an additive for enhancing n type organic thin film transistor stability |
| topic | air‐stable n‐type organic thin film transistors (OTFTs) conjugated polymer blend poly(2‐vinylpyridine) (P2VP) GIWAXS STXM |
| url | https://doi.org/10.1002/aelm.202300660 |
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