Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation
A CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current–voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 1010 Ω·cm. Typical l...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3693970 |
| _version_ | 1811235765803286528 |
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| author | X. C. Zhao X. P. Ouyang Y. D. Xu H. T. Han Z. C. Zhang T. Wang G. Q. Zha X. Ouyang |
| author_facet | X. C. Zhao X. P. Ouyang Y. D. Xu H. T. Han Z. C. Zhang T. Wang G. Q. Zha X. Ouyang |
| author_sort | X. C. Zhao |
| collection | DOAJ |
| description | A CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current–voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 1010 Ω·cm. Typical leakage current for the planar devices was ∼3 nA for a field strength of 1000 V·cm–1. The test results show that the CdZnTe detector has a fast time response, with a rise time of approximately 2 ns, when exposed to transient and pulsed irradiation of X-rays or electron beams. The decay of current curves is observed and discussed according to charge carrier trapping effects and space-charge accumulation mechanisms. It is suggested that the current decreases quickly with strengthening of the electric field, possibly because of charge de-trapping. |
| first_indexed | 2024-04-12T11:57:36Z |
| format | Article |
| id | doaj.art-ffc6653372fa4f9fbd4a1576f2cb9e13 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T11:57:36Z |
| publishDate | 2012-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-ffc6653372fa4f9fbd4a1576f2cb9e132022-12-22T03:33:57ZengAIP Publishing LLCAIP Advances2158-32262012-03-0121012162012162-610.1063/1.3693970063201ADVTime response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiationX. C. Zhao0X. P. Ouyang1Y. D. Xu2H. T. Han3Z. C. Zhang4T. Wang5G. Q. Zha6X. Ouyang7Northwest Institute of Nuclear Technology, Xi'an 710024, ChinaNorthwest Institute of Nuclear Technology, Xi'an 710024, ChinaState Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, ChinaNorthwest Institute of Nuclear Technology, Xi'an 710024, ChinaNorthwest Institute of Nuclear Technology, Xi'an 710024, ChinaState Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, ChinaCollege of Physical Science and Technology, Sichuan University, Chengdu 610064, ChinaA CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current–voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 1010 Ω·cm. Typical leakage current for the planar devices was ∼3 nA for a field strength of 1000 V·cm–1. The test results show that the CdZnTe detector has a fast time response, with a rise time of approximately 2 ns, when exposed to transient and pulsed irradiation of X-rays or electron beams. The decay of current curves is observed and discussed according to charge carrier trapping effects and space-charge accumulation mechanisms. It is suggested that the current decreases quickly with strengthening of the electric field, possibly because of charge de-trapping.http://dx.doi.org/10.1063/1.3693970 |
| spellingShingle | X. C. Zhao X. P. Ouyang Y. D. Xu H. T. Han Z. C. Zhang T. Wang G. Q. Zha X. Ouyang Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation AIP Advances |
| title | Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation |
| title_full | Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation |
| title_fullStr | Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation |
| title_full_unstemmed | Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation |
| title_short | Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation |
| title_sort | time response of cd0 9zn0 1te crystals under transient and pulsed irradiation |
| url | http://dx.doi.org/10.1063/1.3693970 |
| work_keys_str_mv | AT xczhao timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT xpouyang timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT ydxu timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT hthan timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT zczhang timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT twang timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT gqzha timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation AT xouyang timeresponseofcd09zn01tecrystalsundertransientandpulsedirradiation |