Synthesis, structural, electrokinetic and energy state properties of ZrNi1-хVxSn solid solution
The samples of ZrNi<sub>1-<em>х</em></sub>V<em><sub>x</sub></em>Sn solid solution (<em>x</em> = 0–0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2019-10-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3937 |
| Summary: | The samples of ZrNi<sub>1-<em>х</em></sub>V<em><sub>x</sub></em>Sn solid solution (<em>x</em> = 0–0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073 K. The electrokinetic and energy state characteristics of the ZrNi<sub>1-<em>х</em></sub>V<em><sub>x</sub></em>Sn semiconducting solid solution were investigated in the temperature range <em>T</em> = 80–400 K. An analysis of behavior of the electrokinetic and energetic characteristics, in particular, the motion rate of the Fermi level, Δ<em>ε</em><sub>F</sub>/Δ<em>x</em> for ZrNi<sub>1-<em>x</em></sub>V<em><sub>x</sub></em>Sn, allows to assume about the simultaneous generation of the structural defects of donor and acceptor nature in the crystal. The additional researches are required to establish the mechanisms of donor generation. |
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| ISSN: | 1729-4428 2309-8589 |