Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain
Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fiel...
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| Format: | Article |
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MDPI AG
2022-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/10/1390 |
| _version_ | 1797474134972694528 |
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| author | Fang Zhang Xianqi Dai Liangliang Shang Wei Li |
| author_facet | Fang Zhang Xianqi Dai Liangliang Shang Wei Li |
| author_sort | Fang Zhang |
| collection | DOAJ |
| description | Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS<sub>2</sub> vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS<sub>2</sub> heterostructure possesses a type-II band alignment. Moreover, the electric field can effectively tune both the band gap and the band alignment type. Additionally, the band gap could be tuned effectively by strain, while the band alignment type is robust under strain. Our study opens up a new avenue for the application of ultrathin arsenene-based vdW heterostructures in future nano- and optoelectronics applications. Our study demonstrates that the arsenene/WS<sub>2</sub> heterostructure offers a candidate material for optoelectronic and nanoelectronic devices. |
| first_indexed | 2024-03-09T20:25:49Z |
| format | Article |
| id | doaj.art-ffe2921e3ec44faa9f97b169eab92398 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T20:25:49Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-ffe2921e3ec44faa9f97b169eab923982023-11-23T23:37:40ZengMDPI AGCrystals2073-43522022-09-011210139010.3390/cryst12101390Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and StrainFang Zhang0Xianqi Dai1Liangliang Shang2Wei Li3School of Electrical and Mechanical Engineering, Pingdingshan University, Pingdingshan 467000, ChinaSchool of Physics, Henan Normal University, Xinxiang 453007, ChinaSchool of Physics, Henan Normal University, Xinxiang 453007, ChinaSchool of Mathematics and Physics, Henan University of Urban Construction, Pingdingshan 467036, ChinaArsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS<sub>2</sub> vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS<sub>2</sub> heterostructure possesses a type-II band alignment. Moreover, the electric field can effectively tune both the band gap and the band alignment type. Additionally, the band gap could be tuned effectively by strain, while the band alignment type is robust under strain. Our study opens up a new avenue for the application of ultrathin arsenene-based vdW heterostructures in future nano- and optoelectronics applications. Our study demonstrates that the arsenene/WS<sub>2</sub> heterostructure offers a candidate material for optoelectronic and nanoelectronic devices.https://www.mdpi.com/2073-4352/12/10/1390electric fieldband alignmentstrainarsenene/WS<sub>2</sub> heterostructure |
| spellingShingle | Fang Zhang Xianqi Dai Liangliang Shang Wei Li Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain Crystals electric field band alignment strain arsenene/WS<sub>2</sub> heterostructure |
| title | Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain |
| title_full | Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain |
| title_fullStr | Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain |
| title_full_unstemmed | Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain |
| title_short | Tunable Band Alignment in the Arsenene/WS<sub>2</sub> Heterostructure by Applying Electric Field and Strain |
| title_sort | tunable band alignment in the arsenene ws sub 2 sub heterostructure by applying electric field and strain |
| topic | electric field band alignment strain arsenene/WS<sub>2</sub> heterostructure |
| url | https://www.mdpi.com/2073-4352/12/10/1390 |
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