Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors

In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, wh...

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Main Authors: A. Rogalski, Małgorzata Kopytko, Piotr Martyniuk, W. Hu
Format: Article
Language:English
Published: Polish Academy of Sciences 2020-08-01
Series:Bulletin of the Polish Academy of Sciences: Technical Sciences
Subjects:
Online Access:https://journals.pan.pl/Content/117256/PDF/21_845-855_01622_Bpast.No.68-4_27.08.20.pdf
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author A. Rogalski
Małgorzata Kopytko
Piotr Martyniuk
W. Hu
author_facet A. Rogalski
Małgorzata Kopytko
Piotr Martyniuk
W. Hu
author_sort A. Rogalski
collection DOAJ
description In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
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spelling doaj.art-ffee6a8723e64ff79f414b1f01c2369c2022-12-22T02:33:43ZengPolish Academy of SciencesBulletin of the Polish Academy of Sciences: Technical Sciences2300-19172020-08-0168No. 4 (i.a. Special Section on Advances in Electrical Power Engineering)845855https://doi.org/10.24425/bpasts.2020.134174Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectorsA. RogalskiMałgorzata Kopytkohttps://orcid.org/0000-0002-5838-3310Piotr Martyniukhttps://orcid.org/0000-0003-1963-3521W. HuIn the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.https://journals.pan.pl/Content/117256/PDF/21_845-855_01622_Bpast.No.68-4_27.08.20.pdfcolloidal quantum dot infrared photodetectorshot infrared detectorshgcdte photodiodesp-i-n depleted photodiodesblip performance
spellingShingle A. Rogalski
Małgorzata Kopytko
Piotr Martyniuk
W. Hu
Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
Bulletin of the Polish Academy of Sciences: Technical Sciences
colloidal quantum dot infrared photodetectors
hot infrared detectors
hgcdte photodiodes
p-i-n depleted photodiodes
blip performance
title Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
title_full Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
title_fullStr Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
title_full_unstemmed Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
title_short Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
title_sort comparison of performance limits of the hot hgcdte photodiodes with colloidal quantum dot infrared detectors
topic colloidal quantum dot infrared photodetectors
hot infrared detectors
hgcdte photodiodes
p-i-n depleted photodiodes
blip performance
url https://journals.pan.pl/Content/117256/PDF/21_845-855_01622_Bpast.No.68-4_27.08.20.pdf
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AT piotrmartyniuk comparisonofperformancelimitsofthehothgcdtephotodiodeswithcolloidalquantumdotinfrareddetectors
AT whu comparisonofperformancelimitsofthehothgcdtephotodiodeswithcolloidalquantumdotinfrareddetectors