Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics
Thermophotovoltaics is a promising technology for heat recovery and has garnered tremendous attention in the last decades. This work theoretically evaluates the performance of a thermophotovoltaic system equipped with refractory all-ceramic selective thermal emitters made of boron carbide, silicon c...
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MDPI AG
2022-03-01
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Online Access: | https://www.mdpi.com/1996-1073/15/5/1830 |
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author | Fangqi Chen Xiaojie Liu Yanpei Tian Jon Goldsby Yi Zheng |
author_facet | Fangqi Chen Xiaojie Liu Yanpei Tian Jon Goldsby Yi Zheng |
author_sort | Fangqi Chen |
collection | DOAJ |
description | Thermophotovoltaics is a promising technology for heat recovery and has garnered tremendous attention in the last decades. This work theoretically evaluates the performance of a thermophotovoltaic system equipped with refractory all-ceramic selective thermal emitters made of boron carbide, silicon carbide and beryllium oxide for a high working temperature of 2000 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, which corresponds to the external quantum efficiency of a SiC/Si tandem cell. The influence of thickness and filling ratio on the emissivity of thermal emitters over the wavelength ranging from 0.2 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m to 2.5 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m is studied. The corresponding spectral heat flux and output power are analyzed as well. For a specific configuration, the parameters for the thermophotovoltaic system are obtained, including short circuit current, open circuit voltage, fill factor, total heat flux, output power and conversion efficiency. The proposed all-ceramic thermal emitter ensures the robustness in the high-temperature working condition due to its thermal stability. The tuning of emissivity is achieved and analyzed based on distinct emitter nanostructures, and the further influence on the thermophotovoltaic system performance is deeply explored. This work sheds light on research of high-temperature thermal management and power generation. |
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issn | 1996-1073 |
language | English |
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series | Energies |
spelling | doaj.art-fff21fbfb90b44d9b495513d3ad16b732023-11-23T22:58:05ZengMDPI AGEnergies1996-10732022-03-01155183010.3390/en15051830Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field ThermophotovoltaicsFangqi Chen0Xiaojie Liu1Yanpei Tian2Jon Goldsby3Yi Zheng4Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USADepartment of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USADepartment of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USANational Aeronautics and Space Administration Glenn Research Center, Cleveland, OH 44135, USADepartment of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USAThermophotovoltaics is a promising technology for heat recovery and has garnered tremendous attention in the last decades. This work theoretically evaluates the performance of a thermophotovoltaic system equipped with refractory all-ceramic selective thermal emitters made of boron carbide, silicon carbide and beryllium oxide for a high working temperature of 2000 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, which corresponds to the external quantum efficiency of a SiC/Si tandem cell. The influence of thickness and filling ratio on the emissivity of thermal emitters over the wavelength ranging from 0.2 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m to 2.5 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m is studied. The corresponding spectral heat flux and output power are analyzed as well. For a specific configuration, the parameters for the thermophotovoltaic system are obtained, including short circuit current, open circuit voltage, fill factor, total heat flux, output power and conversion efficiency. The proposed all-ceramic thermal emitter ensures the robustness in the high-temperature working condition due to its thermal stability. The tuning of emissivity is achieved and analyzed based on distinct emitter nanostructures, and the further influence on the thermophotovoltaic system performance is deeply explored. This work sheds light on research of high-temperature thermal management and power generation.https://www.mdpi.com/1996-1073/15/5/1830thermophotovoltaicsnear-fieldthermal emitterrefractory |
spellingShingle | Fangqi Chen Xiaojie Liu Yanpei Tian Jon Goldsby Yi Zheng Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics Energies thermophotovoltaics near-field thermal emitter refractory |
title | Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics |
title_full | Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics |
title_fullStr | Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics |
title_full_unstemmed | Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics |
title_short | Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics |
title_sort | refractory all ceramic thermal emitter for high temperature near field thermophotovoltaics |
topic | thermophotovoltaics near-field thermal emitter refractory |
url | https://www.mdpi.com/1996-1073/15/5/1830 |
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