Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature
We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO<sub>2</sub> substrates by magnetron sputtering dep...
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| Format: | Article |
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MDPI AG
2022-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/11/2024 |
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| author | Xingzhen Yan Kaian Song Bo Li Yiqiang Zhang Fan Yang Yanjie Wang Chao Wang Yaodan Chi Xiaotian Yang |
| author_facet | Xingzhen Yan Kaian Song Bo Li Yiqiang Zhang Fan Yang Yanjie Wang Chao Wang Yaodan Chi Xiaotian Yang |
| author_sort | Xingzhen Yan |
| collection | DOAJ |
| description | We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO<sub>2</sub> substrates by magnetron sputtering deposition to regulate the field-effect performance of TFTs. According to the analysis of field-effect properties before and after annealing in different atmospheres, the performance of TFT devices with ZnO/AZO/SiO<sub>2</sub>/Si double-active-layers was obviously better than that with single AZO or ZnO active layer and inverted AZO/ZnO/SiO<sub>2</sub>/Si double-active-layers in the device structure. The active layer with higher carrier concentration (AZO in this case) was closer to the dielectric layer, which was more favorable for carrier regulation in TFT devices. In addition, the annealed device had a lower on/off ratio (I<sub>on</sub>/I<sub>off</sub>), easier-to-reach on-state, and higher mobility. Furthermore, the performance of the devices annealed under vacuum condition was obviously better than that annealed under air atmosphere. The I<sub>on</sub>/I<sub>off</sub> could reach 6.8 × 10<sup>5</sup> and the threshold voltage was only 2.9 V. |
| first_indexed | 2024-03-09T18:09:29Z |
| format | Article |
| id | doaj.art-fff29f5d901141cd9a6c5aee3edcc96a |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T18:09:29Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-fff29f5d901141cd9a6c5aee3edcc96a2023-11-24T09:16:38ZengMDPI AGMicromachines2072-666X2022-11-011311202410.3390/mi13112024Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room TemperatureXingzhen Yan0Kaian Song1Bo Li2Yiqiang Zhang3Fan Yang4Yanjie Wang5Chao Wang6Yaodan Chi7Xiaotian Yang8Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaKey Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, School of Electronics and Computer, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, ChinaWe prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO<sub>2</sub> substrates by magnetron sputtering deposition to regulate the field-effect performance of TFTs. According to the analysis of field-effect properties before and after annealing in different atmospheres, the performance of TFT devices with ZnO/AZO/SiO<sub>2</sub>/Si double-active-layers was obviously better than that with single AZO or ZnO active layer and inverted AZO/ZnO/SiO<sub>2</sub>/Si double-active-layers in the device structure. The active layer with higher carrier concentration (AZO in this case) was closer to the dielectric layer, which was more favorable for carrier regulation in TFT devices. In addition, the annealed device had a lower on/off ratio (I<sub>on</sub>/I<sub>off</sub>), easier-to-reach on-state, and higher mobility. Furthermore, the performance of the devices annealed under vacuum condition was obviously better than that annealed under air atmosphere. The I<sub>on</sub>/I<sub>off</sub> could reach 6.8 × 10<sup>5</sup> and the threshold voltage was only 2.9 V.https://www.mdpi.com/2072-666X/13/11/2024thin film transistorindium-freemetal oxidedouble active layers |
| spellingShingle | Xingzhen Yan Kaian Song Bo Li Yiqiang Zhang Fan Yang Yanjie Wang Chao Wang Yaodan Chi Xiaotian Yang Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature Micromachines thin film transistor indium-free metal oxide double active layers |
| title | Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature |
| title_full | Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature |
| title_fullStr | Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature |
| title_full_unstemmed | Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature |
| title_short | Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature |
| title_sort | performance enhancement for indium free metal oxide thin film transistors with double active layers by magnetron sputtering at room temperature |
| topic | thin film transistor indium-free metal oxide double active layers |
| url | https://www.mdpi.com/2072-666X/13/11/2024 |
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